Growth of dense SiC films on Si at medium temperatures by pulsed laser deposition

Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

Volumn 19, Issue 5, 2001, Pages 2691-2694

  Craciun, V ^a   Lambers, E ^a   Bassim, N D ^a   Baney, R H ^a   Singh, R K ^a  

^a University of Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CHEMICAL BONDS; COMPOSITION EFFECTS; CRYSTAL STRUCTURE; HIGH TEMPERATURE EFFECTS; MOLECULAR ORIENTATION; OPTICAL PROPERTIES; PROTECTIVE COATINGS; PULSED LASER DEPOSITION; SILICON CARBIDE; SUBSTRATES; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC BONDING;

THIN FILMS;

EID: 0035442436     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1372899     Document Type: Article

References (15)