Atomic layer deposition of aluminium thin films using an alternating supply of trimethylaluminum and a hydrogen plasma

Electrochemical and Solid-State Letters

Volumn 5, Issue 10, 2002, Pages

  Lee, Yong Ju ^a   Kang, Sang Won ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ALLOYS; ATOMIC FORCE MICROSCOPY; DEPOSITION; FILM GROWTH; HYDROGEN; MORPHOLOGY; PLASMAS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SURFACE ROUGHNESS; SURFACES; THIN FILMS;

ATOMIC LAYER DEPOSITION; ELASTIC RECOIL DETECTION TIME OF FLIGHT; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; HYDROGEN PLASMA; ROOT MEAN SQUARE ROUGHNESS; TRIMETHYALUMINUM;

ALUMINUM;

EID: 0036795165     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1503204     Document Type: Article

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