Ta-rich atomic layer deposition TaN adhesion layer for Cu interconnects by means of plasma-enhanced atomic layer deposition

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 3, 2005, Pages 979-983

  Furuya, Akira ^a,b   Tsuda, Hiroshi ^a   Ogawa, Shinichi ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^b RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADHESION; COPPER; DEPOSITION; PHYSICAL VAPOR DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; TANTALUM COMPOUNDS; THIN FILMS;

ADHESION LAYERS; ATOMIC LAYER DEPOSITION (ALD);

TANTALUM;

EID: 29344473470     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1926289     Document Type: Article

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