Increment of the dielectric constant of Ta2O5 thin films by retarding interface oxide growth on Si substrates

Electrochemical and Solid-State Letters

Volumn 4, Issue 7, 2001, Pages

  Song, Hyun Jung ^a   Lee, Choon Soo ^b   Kang, Sang Won ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Genitech Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; LEAKAGE CURRENTS; OXIDES; OXYGEN; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICA; SILICON WAFERS; STOICHIOMETRY; THERMAL EFFECTS; THIN FILMS;

INTERFACE OXIDE LAYER; PLASMA ENHANCED ATOMIC LAYER DEPOSITION; RETARDING INTERFACE OXIDE GROWTH; TANTALUM OXIDES;

TANTALUM COMPOUNDS;

EID: 0035412291     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1377835     Document Type: Article

References (10)