Characteristics of HfO 2 thin films grown by plasma atomic layer deposition

Applied Physics Letters

Volumn 87, Issue 5, 2005, Pages

  Kim, Jinwoo ^a   Kim, Seokhoon ^a   Jeon, Hyeongtag ^a   Cho, M H ^b   Chung, K B ^b   Bae, Choelhwyi ^c  

^a Hanyang University   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

^c NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIRECT PLASMA ALD (DPALD) METHODS; EQUIVALENT OXIDE THICKNESS (EOT); POLYCRYSTALLINE STRUCTURE; REMOTE PLASMA ATOMIC LAYER DEPOSITION (RPALD); STOICHIOMETRIC CHANGE;

AMORPHOUS MATERIALS; CAPACITORS; FILM GROWTH; HAFNIUM COMPOUNDS; HYDROGEN INORGANIC COMPOUNDS; PLASMA APPLICATIONS; SCATTERING; SEMICONDUCTOR MATERIALS; SILICA; STOICHIOMETRY;

THIN FILMS;

EID: 33645507068     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2005370     Document Type: Article

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