Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization

Materials Science and Engineering C

Volumn 24, Issue 1-2, 2004, Pages 289-291

  Kim, Do Heyoung ^a   Kim, Young Jae ^a   Park, Jun Hyung ^a   Kim, Jin Hyeok ^a  

^a Chonnam National University   (South Korea)

Author keywords

Atomic layer deposition; Plasma; Resistivity; Stability; TiN

Indexed keywords

COPPER; DEPOSITION; HYDROGEN; METALLIC FILMS; METALLIZING; TIN;

FILM RESISTIVITY;

MATERIALS SCIENCE;

TITANIUM NITRIDE;

EID: 0347477258     PISSN: 09284931     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.msec.2003.09.062     Document Type: Article

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