Metal organic atomic layer deposition of high-k gate dielectrics using plasma oxidation

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 6 B, 2003, Pages

  Endo, Kazuhiko ^a   Tatsumi, Toru ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Atomic layer deposition; HfO 2; High dielectric constant; Plasma oxidation; ZrO2

Indexed keywords

ADSORPTION; CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; ELECTRON CYCLOTRON RESONANCE; ELLIPSOMETRY; LEAKAGE CURRENTS; OXIDATION; PERMITTIVITY; SECONDARY ION MASS SPECTROMETRY; STRUCTURE (COMPOSITION); TRANSMISSION ELECTRON MICROSCOPY;

METAL-ORGANIC PRECURSORS;

DIELECTRIC MATERIALS;

EID: 0041864110     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.l685     Document Type: Article

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