Structural, electrical, and optical properties of transparent gallium oxide thin films grown by plasma-enhanced atomic layer deposition

Journal of Applied Physics

Volumn 98, Issue 2, 2005, Pages

  Shan, F K ^a   Liu, G X ^a   Lee, W J ^a   Lee, G H ^a   Kim, I S ^a   Shin, B C ^a  

^a Dong Eui University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; ATOMIC LAYER DEPOSITION; BAND GAPS; MONOCLINIC STRUCTURE;

ATOMIC FORCE MICROSCOPY; DIFFUSION; ELLIPSOMETRY; FILM GROWTH; GALLIUM COMPOUNDS; OPTICAL PROPERTIES; PULSED LASER DEPOSITION; RAPID THERMAL ANNEALING; REFRACTIVE INDEX; SENSORS; SPECTROPHOTOMETERS; ULTRAVIOLET RADIATION; X RAY DIFFRACTION ANALYSIS;

THIN FILMS;

EID: 23844468509     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1980535     Document Type: Article

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