Effects of heat treatment on Ta2O5 sensing membrane for low drift and high sensitivity pH-ISFET

Sensors and Actuators, B: Chemical

Volumn 34, Issue 1-3, 1996, Pages 441-445

  Kwona, Dae Hyuk ^a   Cho, Byung Woog ^a   Kim, Chang Soo ^a   Sohn, Byung Ki ^a  

^a Kyungpook National University   (South Korea)

Author keywords

pH ISFET; RF reactive sputtering; Sensing membrane; Ta2O5

Indexed keywords

EID: 0042545876     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0925-4005(96)01938-7     Document Type: Article

References (15)

1. P. Bergveld, Development of an ion-sensitive solid state device for neurophysiological measurement, IEEE Trans. Biomed. Eng, 21 (1974) 485-487.
2. S. Nakamoto, N. Ito, T. Kuriyama and J. Kimura, A lift-off method for patterning enzyme-immobilized membranes in multi-biosensors, Sensors and Actuators, 13 (1988) 165-172.
3. Y. Hanazato, M. Nakimo, S. Shiono and M. Maeda, Integrated multi-biosensors based on an ion-sensitive field-effect transistor using photolithographic techniques, IEEE Trans. Electron. Devices, 36 (1989) 1303-1309.
4. T. Matsuo and M. Esashi, Methods of ISFET Fabrication, Department of Electronic Engineering, Tohoku University, Internal report, 1980.
5. 5-gates of pH-sensitive devices: comparative spectroscopic and electrical studies, Sensors and Actuators, 17 (1989) 195-202.
6. 5 as a solid state ion-sensitive membrane, Jpn. J. Appl. Phys., 26 (1987) 2112-2120.
7. A.G. Tevesz, On the mechanism of the ion sensitive field effect transistor, Thin Solid Films, 41 (1977) 643-647.
8. P. Bergveld, N.F. De Rooij and J.N. Zemel, Physical mechanisms for chemically sensitive semiconductor devices, Nature, 273 (1978) 438-443.
9. D.E. Yates, S. Levine and T.W. Healy, Site binding model of the electrical double layer at the oxide/water interface, J. Chem. Soc. Faraday Trans., 70 (1974) 1807-1818.
10. 2-Si system. Physical and theoretical aspects, IEEE Trans. Electron. Devices, 26 (1979) 1805-1815,
11. L. Bousse, N.F. De Rooij and P. Bergveld, Operation of chemically sensitive field effect sensors as a function of the insulator-electrolyte interface, IEEE Trans. Electron. Devices, 30 (1983) 1263-1270.
12. JCPDS Powder Diffraction File, published by Joint Committee on Powder Diffraction Standards, 1974.
13. 5 dielectric film for high-speed bipolar memories, IEEE Trans. Electron. Devices, 34 (1987) 1957-1962.
14. 5 capacitor technology compatible with advanced VLSI process, IEDM Tech. Dig., (1988) 29-30.
15. J. Becker and V. Scheuer, Multi-layer optical coating fabrication by ion beam sputter deposition, Proc. SPIE Int. Soc. Occup. Eng., 1989, p. 1019.