-
1
-
-
2942610744
-
Spintronics: Fundamentals and applications
-
Apr
-
I. Zutic, J. Fabian, and S. Das Sarma, "Spintronics: Fundamentals and applications," Rev. Mod. Phys., vol. 76, no. 2, pp. 323-410, Apr. 2004.
-
(2004)
Rev. Mod. Phys
, vol.76
, Issue.2
, pp. 323-410
-
-
Zutic, I.1
Fabian, J.2
Das Sarma, S.3
-
2
-
-
0032573499
-
Magnetoelectrortics
-
Nov
-
G. Prinz, "Magnetoelectrortics," Science, vol. 282, no. 5394, pp. 1660-1663, Nov. 1998.
-
(1998)
Science
, vol.282
, Issue.5394
, pp. 1660-1663
-
-
Prinz, G.1
-
3
-
-
0035900398
-
Spintronics: A spin-based electronics vision for the future
-
Nov
-
S. Wolf, D. D. Awschalom, R. A. Buhrman, J. M. Daughton, S. von Molnar, M. L. Roukes, A. Y. Chtchelkanova, and D. M. Treger, "Spintronics: A spin-based electronics vision for the future," Science, vol. 294, no. 5546, pp. 1488-1495, Nov. 2002.
-
(2002)
Science
, vol.294
, Issue.5546
, pp. 1488-1495
-
-
Wolf, S.1
Awschalom, D.D.2
Buhrman, R.A.3
Daughton, J.M.4
von Molnar, S.5
Roukes, M.L.6
Chtchelkanova, A.Y.7
Treger, D.M.8
-
4
-
-
1942449168
-
Electronic analog of the electro-optic modulator
-
Feb
-
S. Datta and B. Das, "Electronic analog of the electro-optic modulator," Appl. Phys. Lett., vol. 56, no. 7, pp. 665-667, Feb. 1990.
-
(1990)
Appl. Phys. Lett
, vol.56
, Issue.7
, pp. 665-667
-
-
Datta, S.1
Das, B.2
-
5
-
-
4243114883
-
Spin accumulation in gold-films
-
Apr
-
M. Johonson, "Spin accumulation in gold-films," Phys. Rev. Lett. vol. 70, no. 14, pp. 2142-2145, Apr. 1993.
-
(1993)
Phys. Rev. Lett
, vol.70
, Issue.14
, pp. 2142-2145
-
-
Johonson, M.1
-
6
-
-
0006902404
-
Bipolar spin switch
-
Apr
-
M. Johnson, "Bipolar spin switch," Science, vol. 260, no. 5106, pp. 320-323, Apr. 1993.
-
(1993)
Science
, vol.260
, Issue.5106
, pp. 320-323
-
-
Johnson, M.1
-
7
-
-
0000947277
-
Perpendicular hot electron spin-valve effect in a new magnetic field sensor: The spin-valve transistor
-
Jun
-
D. J. Monsma, J. C. Lodder, T. J. A. Popma, and B. Dieny, "Perpendicular hot electron spin-valve effect in a new magnetic field sensor: The spin-valve transistor," Phys. Rev. Lett., vol. 74, no. 26, pp. 5260-5263, Jun. 1995.
-
(1995)
Phys. Rev. Lett
, vol.74
, Issue.26
, pp. 5260-5263
-
-
Monsma, D.J.1
Lodder, J.C.2
Popma, T.J.A.3
Dieny, B.4
-
8
-
-
0142039865
-
The spin-valve transistor: A review and outlook
-
Oct
-
R. Jansen, H. Gokcan, O. M. J. van't Erve, F. M. Postma, and J. C. Lodder, "The spin-valve transistor: A review and outlook," J. Phys. D, Appl. Phys., vol. 36, no. 19, pp. R289-R308, Oct. 2003.
-
(2003)
J. Phys. D, Appl. Phys
, vol.36
, Issue.19
-
-
Jansen, R.1
Gokcan, H.2
van't Erve, O.M.J.3
Postma, F.M.4
Lodder, J.C.5
-
9
-
-
0031223818
-
Energy-dependent hot electron transport across a spin-valve
-
Sep
-
K. Mizushima, T. Kino, T. Yamaguchi, and K. Tanaka, "Energy-dependent hot electron transport across a spin-valve," IEEE Trans. Magn., vol. 33, no. 5, pp. 3500-3504, Sep. 1997.
-
(1997)
IEEE Trans. Magn
, vol.33
, Issue.5
, pp. 3500-3504
-
-
Mizushima, K.1
Kino, T.2
Yamaguchi, T.3
Tanaka, K.4
-
10
-
-
79956016569
-
Room temperature operation of a high output current magnetic tunnel transistor
-
May
-
S. van Dijken, X. Jiang, and S. S. P. Parkin, "Room temperature operation of a high output current magnetic tunnel transistor," Appl. Phys. Lett., vol. 80, no. 18, pp. 3364-3366, May 2002.
-
(2002)
Appl. Phys. Lett
, vol.80
, Issue.18
, pp. 3364-3366
-
-
van Dijken, S.1
Jiang, X.2
Parkin, S.S.P.3
-
11
-
-
0042378356
-
Giant magnetocurrent exceeding 3400% in magnetic tunnel transistors with spin-valve base layers
-
Aug
-
S. van Dijken, X. Jiang, and S. S. P. Parkin, "Giant magnetocurrent exceeding 3400% in magnetic tunnel transistors with spin-valve base layers," Appl. Phys. Lett., vol. 83, no. 5, pp. 951-953, Aug. 2003.
-
(2003)
Appl. Phys. Lett
, vol.83
, Issue.5
, pp. 951-953
-
-
van Dijken, S.1
Jiang, X.2
Parkin, S.S.P.3
-
12
-
-
0037883691
-
Datta-Das transistor with enhanced spin control
-
Apr
-
J. C. Egues, G. Burkard, and D. Loss, "Datta-Das transistor with enhanced spin control," Appl. Phys. Lett., vol. 82, no. 16, pp. 2658-2660, Apr. 2003.
-
(2003)
Appl. Phys. Lett
, vol.82
, Issue.16
, pp. 2658-2660
-
-
Egues, J.C.1
Burkard, G.2
Loss, D.3
-
13
-
-
0038541874
-
Nonballistic spin-field-effect transistor
-
1-146 801/4, Apr
-
J. Schliemann, J. C. Egues, and D. Loss, "Nonballistic spin-field-effect transistor," Phys. Rev. Lett., vol. 90, no. 14, pp. 146 801/1-146 801/4, Apr. 2003.
-
(2003)
Phys. Rev. Lett
, vol.90
, Issue.14
, pp. 146-801
-
-
Schliemann, J.1
Egues, J.C.2
Loss, D.3
-
15
-
-
0034890508
-
Ballistic spin-filter transistor
-
1-161 307/4, Apr
-
D. Grundler, "Ballistic spin-filter transistor," Phys. Rev. B, Condens. Matter, vol. 63, no. 16, pp. 161 307/1-161 307/4, Apr. 2001.
-
(2001)
Phys. Rev. B, Condens. Matter
, vol.63
, Issue.16
, pp. 161-307
-
-
Grundler, D.1
-
16
-
-
0037458137
-
High current gain silicon-based spin transistor
-
Nov
-
C. L. Dennis, C. Sirisathitkul, G. J. Ensell, J. F. Gregg, and S. M. Thompson, "High current gain silicon-based spin transistor," J. Phys. D, Appl. Phys., vol. 36, no. 2, pp. 81-87, Nov. 2003.
-
(2003)
J. Phys. D, Appl. Phys
, vol.36
, Issue.2
, pp. 81-87
-
-
Dennis, C.L.1
Sirisathitkul, C.2
Ensell, G.J.3
Gregg, J.F.4
Thompson, S.M.5
-
17
-
-
0942278273
-
Magnetic bipolar transistor
-
Jan
-
J. Fabian, I. Zutic, and S. Das Sarma, "Magnetic bipolar transistor," Appl. Phys. Lett., vol. 84, no. 1, pp. 85-87, Jan. 2004.
-
(2004)
Appl. Phys. Lett
, vol.84
, Issue.1
, pp. 85-87
-
-
Fabian, J.1
Zutic, I.2
Das Sarma, S.3
-
18
-
-
2142698676
-
Spin-polarized current amplification and spin injection in magnetic bipolar transistors
-
1-115 314/13, Mar
-
J. Fabian and I. Zutic, "Spin-polarized current amplification and spin injection in magnetic bipolar transistors," Phys. Rev. B, Condens. Matter, vol. 69, no. 11, pp. 115 314/1-115 314/13, Mar. 2004.
-
(2004)
Phys. Rev. B, Condens. Matter
, vol.69
, Issue.11
, pp. 115-314
-
-
Fabian, J.1
Zutic, I.2
-
19
-
-
0038444655
-
Theory of semiconductor magnetic bipolar transistors
-
Jun
-
M. E. Flatte, Z. G. Yu, E. Johnston-Halperin, and D. D. Awschalom, "Theory of semiconductor magnetic bipolar transistors," Appl. Phys. Lett., vol. 82, no. 26, pp. 4740-4742, Jun. 2003.
-
(2003)
Appl. Phys. Lett
, vol.82
, Issue.26
, pp. 4740-4742
-
-
Flatte, M.E.1
Yu, Z.G.2
Johnston-Halperin, E.3
Awschalom, D.D.4
-
20
-
-
2942666108
-
Silicon inversion layer with a ferromagnetic gate: A novel spin source
-
Jun
-
J. P. McGuire, C. Ciuti, and L. J. Sham, "Silicon inversion layer with a ferromagnetic gate: A novel spin source," J. Appl. Phys., vol. 95, no. 11, pp. 6625-6629, Jun. 2004.
-
(2004)
J. Appl. Phys
, vol.95
, Issue.11
, pp. 6625-6629
-
-
McGuire, J.P.1
Ciuti, C.2
Sham, L.J.3
-
21
-
-
2142649268
-
A spin metal-oxide-semiconductor field-effect transistor using half-metallic-ferromagnet contacts for the source and drain
-
Mar
-
S. Sugahara and M. Tanaka, "A spin metal-oxide-semiconductor field-effect transistor using half-metallic-ferromagnet contacts for the source and drain," Appl. Phys. Lett., vol. 84, no. 13, pp. 2307-2309, Mar. 2004.
-
(2004)
Appl. Phys. Lett
, vol.84
, Issue.13
, pp. 2307-2309
-
-
Sugahara, S.1
Tanaka, M.2
-
22
-
-
20944431559
-
-
S. Sugahara and M. Tanaka, A spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) with a ferromagnetic semiconductor for the channel, J. Appl. Phys., 97, no. 10, pp. 10D503/1-10D503/3, May 2005.
-
S. Sugahara and M. Tanaka, "A spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) with a ferromagnetic semiconductor for the channel," J. Appl. Phys., vol. 97, no. 10, pp. 10D503/1-10D503/3, May 2005.
-
-
-
-
23
-
-
25844486441
-
Spin metal-oxide-semiconductor field-effect transistors (spin MOSFETs) for integrated spin electronics
-
Aug
-
S. Sugahara, "Spin metal-oxide-semiconductor field-effect transistors (spin MOSFETs) for integrated spin electronics," Proc. Inst. Electr. Eng. - Circuits Devices Syst., vol. 152, no. 4, pp. 355-365, Aug. 2005.
-
(2005)
Proc. Inst. Electr. Eng. - Circuits Devices Syst
, vol.152
, Issue.4
, pp. 355-365
-
-
Sugahara, S.1
-
24
-
-
33747222409
-
Spin MOSFETs as a basis for spintronics
-
May
-
S. Sugahara and M. Tanaka, "Spin MOSFETs as a basis for spintronics," ACM Trans. Storage, vol. 2, no. 2, pp. 197-219, May 2006.
-
(2006)
ACM Trans. Storage
, vol.2
, Issue.2
, pp. 197-219
-
-
Sugahara, S.1
Tanaka, M.2
-
25
-
-
9144237206
-
Novel reconfigurable logic gates using spin metal-oxide-semiconductor field-effect transistors
-
T. Matsuno, S. Sugahara, and M. Tanaka, "Novel reconfigurable logic gates using spin metal-oxide-semiconductor field-effect transistors," Jpn. J. Appl. Phys., vol. 43, no. 9A, pp. 6032-6037, 2004.
-
(2004)
Jpn. J. Appl. Phys
, vol.43
, Issue.9 A
, pp. 6032-6037
-
-
Matsuno, T.1
Sugahara, S.2
Tanaka, M.3
-
26
-
-
34247861920
-
-
A study of transition-metal-doped group-IV magnetic semiconductors by first principle computations, Niigata, 26p-ZA-3
-
K. Araki, K. Sato, and H. Katayama-Yoshida, "A study of transition-metal-doped group-IV magnetic semiconductors by first principle computations," in Proc. Abstracts 63rd Autumn Meeting Jpn. Soc. Appl. Phys., Niigata, 2002. 26p-ZA-3.
-
(2002)
Proc. Abstracts 63rd Autumn Meeting Jpn. Soc. Appl. Phys
-
-
Araki, K.1
Sato, K.2
Katayama-Yoshida, H.3
-
27
-
-
33747231527
-
Materials design of IV-based ferromagnetic semiconductors by inhomogeneous doping
-
Yokohama, 29a-ZH-2
-
K. Araki, M. Shirai, K. Sato, and H. Katayama-Yoshida, "Materials design of IV-based ferromagnetic semiconductors by inhomogeneous doping," in Proc. Abstracts 50th Spring Meeting Jpn. Soc. Appl. Phys., Yokohama, 2003. 29a-ZH-2.
-
(2003)
Proc. Abstracts 50th Spring Meeting Jpn. Soc. Appl. Phys
-
-
Araki, K.1
Shirai, M.2
Sato, K.3
Katayama-Yoshida, H.4
-
28
-
-
0036968525
-
Stability of half-metallic ferromagnetism of zinc-blende type CrAs and MnM (M = Si, Ge and Sn)
-
Oct
-
A. Sakuma, "Stability of half-metallic ferromagnetism of zinc-blende type CrAs and MnM (M = Si, Ge and Sn)," J. Phys. Soc. Jpn., vol. 71, no. 10, pp. 2534-2538, Oct. 2002.
-
(2002)
J. Phys. Soc. Jpn
, vol.71
, Issue.10
, pp. 2534-2538
-
-
Sakuma, A.1
-
29
-
-
1942445579
-
Electronic structure and ferromagnetism of Mn-doped group-IV semiconductors
-
1-155 203/9, Oct
-
A. Stroppa, S. Picozzi, A. Continenza, and A. J. Freeman, "Electronic structure and ferromagnetism of Mn-doped group-IV semiconductors," Phys. Rev. B, Condens. Matter, vol. 68, no. 15, pp. 155 203/1-155 203/9, Oct. 2003.
-
(2003)
Phys. Rev. B, Condens. Matter
, vol.68
, Issue.15
, pp. 155-203
-
-
Stroppa, A.1
Picozzi, S.2
Continenza, A.3
Freeman, A.J.4
-
30
-
-
18244377771
-
1-x
-
Jan
-
1-x," Science, vol. 295, no. 5555, pp. 651-654, Jan. 2002.
-
(2002)
Science
, vol.295
, Issue.5555
, pp. 651-654
-
-
Park, Y.D.1
Hanbicki, A.T.2
Erwin, S.C.3
Hellberg, C.S.4
Sullivan, J.M.5
Mattson, J.E.6
Ambrose, T.F.7
Wilson, A.8
Spanos, G.9
Jonker, B.T.10
-
31
-
-
0037696409
-
1-x, films
-
May
-
1-x, films," J. Magn. Magn. Mater., vol. 262, no. 1, pp. 158-161, May 2003.
-
(2003)
J. Magn. Magn. Mater
, vol.262
, Issue.1
, pp. 158-161
-
-
D'Orazio, F.1
Lucari, F.2
Santucci, S.3
Picozzi, P.4
Verna, A.5
Passacantando, M.6
Pinto, N.7
Morresi, L.8
Gunnella, R.9
Murri, R.10
-
32
-
-
0037101104
-
Ferromagnetism in Mn-doped Ge
-
1-033 303/3, Jul
-
S. Cho, S. Choi, S. C. Hong, Y. Kim, J. B. Ketterson, B. J. Kim, Y. C. Kim, and J. H. Jung, "Ferromagnetism in Mn-doped Ge," Phys. Rev. B, Condens. Matter, vol. 66, no. 3, pp. 033 303/1-033 303/3, Jul. 2002.
-
(2002)
Phys. Rev. B, Condens. Matter
, vol.66
, Issue.3
, pp. 033-303
-
-
Cho, S.1
Choi, S.2
Hong, S.C.3
Kim, Y.4
Ketterson, J.B.5
Kim, B.J.6
Kim, Y.C.7
Jung, J.H.8
-
33
-
-
0347591191
-
Novel germanium-based magnetic semiconductors
-
1-177 203/4, Oct
-
F. Tsui, L. He, L. Ma, A. Tkachuk, K. Nakajima, and T. Chikyow, "Novel germanium-based magnetic semiconductors," Phys. Rev. Lett., vol. 91, no. 17, pp. 177 203/1-177 203/4, Oct. 2003.
-
(2003)
Phys. Rev. Lett
, vol.91
, Issue.17
, pp. 177-203
-
-
Tsui, F.1
He, L.2
Ma, L.3
Tkachuk, A.4
Nakajima, K.5
Chikyow, T.6
-
34
-
-
1842658891
-
Large anomalous Hall effect in a silicon-based magnetic semiconductor
-
Apr
-
N. Manyala, Y. Sidis, J. F. Ditusa, G. Aeppli, D. P. Young, and Z. Fisk, "Large anomalous Hall effect in a silicon-based magnetic semiconductor," Nat. Mater., vol. 3, no. 4, pp. 255-262, Apr. 2004.
-
(2004)
Nat. Mater
, vol.3
, Issue.4
, pp. 255-262
-
-
Manyala, N.1
Sidis, Y.2
Ditusa, J.F.3
Aeppli, G.4
Young, D.P.5
Fisk, Z.6
-
35
-
-
84939180950
-
SB-IGFET: An insulated-gate field-effect transistor using Schottky barrier contacts for source and drain
-
Aug
-
T. Lepselter and S. M. Sze, "SB-IGFET: An insulated-gate field-effect transistor using Schottky barrier contacts for source and drain," Proc. IEEE, vol. 56, no. 8, pp. 1400-1402, Aug. 1968.
-
(1968)
Proc. IEEE
, vol.56
, Issue.8
, pp. 1400-1402
-
-
Lepselter, T.1
Sze, S.M.2
-
36
-
-
0028192851
-
Numerical simulation of tunnel effect transistors employing internal field emission of Schottky barrier junction
-
Jan
-
R. Hattori and J. Shirafuji, "Numerical simulation of tunnel effect transistors employing internal field emission of Schottky barrier junction," Jpn. J. Appl. Phys., vol. 33, no. 1B, pp. 612-618, Jan. 1994.
-
(1994)
Jpn. J. Appl. Phys
, vol.33
, Issue.1 B
, pp. 612-618
-
-
Hattori, R.1
Shirafuji, J.2
-
37
-
-
0000875751
-
25 ferromagnetic electrodes
-
Jul
-
25 ferromagnetic electrodes," Appl. Phys. Lett., vol. 77, no. 2, pp. 283-285, Jul. 2000.
-
(2000)
Appl. Phys. Lett
, vol.77
, Issue.2
, pp. 283-285
-
-
Han, X.1
Oogane, M.2
Kubota, H.3
Ando, Y.4
Miyazaki, T.5
-
38
-
-
4444233280
-
70% TMR at room temperature for SDT sandwich junctions with CoFeB as free and reference layers
-
Jul
-
D. Wang, C. Nordman, J. M. Daughton, Z. Qian, and J. Fink, "70% TMR at room temperature for SDT sandwich junctions with CoFeB as free and reference layers," IEEE Trans. Magn., vol. 40, no. 4, pp. 2269-2271, Jul. 2004.
-
(2004)
IEEE Trans. Magn
, vol.40
, Issue.4
, pp. 2269-2271
-
-
Wang, D.1
Nordman, C.2
Daughton, J.M.3
Qian, Z.4
Fink, J.5
-
39
-
-
0344514687
-
3Si/GaAs(001) hybrid structures
-
Nov
-
3Si/GaAs(001) hybrid structures," Appl. Phys. Lett., vol. 83, no. 19, pp. 3912-3914, Nov. 2003.
-
(2003)
Appl. Phys. Lett
, vol.83
, Issue.19
, pp. 3912-3914
-
-
Herfort, J.1
Schonherr, H.-P.2
Ploog, K.H.3
-
40
-
-
9744259519
-
3Si into GaAs
-
Oct
-
3Si into GaAs," Appl. Phys. Lett., vol. 85, no. 16, pp. 3492-3494, Oct. 2004.
-
(2004)
Appl. Phys. Lett
, vol.85
, Issue.16
, pp. 3492-3494
-
-
Kawaharazuka, A.1
Ramsteiner, M.2
Herfort, J.3
Schoenherr, H.-P.4
Kostial, H.5
Ploog, K.H.6
-
41
-
-
33747597312
-
Schottky barrier height of ferromagnet/Si(001) junctions
-
1-072 110/3, Aug
-
K. Sugiura, R. Nakane, S. Sugahara, and M. Tanaka, "Schottky barrier height of ferromagnet/Si(001) junctions," Appl. Phys. Lett., vol. 89, no. 7, pp. 072 110/1-072 110/3, Aug. 2006.
-
(2006)
Appl. Phys. Lett
, vol.89
, Issue.7
, pp. 072-110
-
-
Sugiura, K.1
Nakane, R.2
Sugahara, S.3
Tanaka, M.4
-
42
-
-
34547626151
-
New class of materials: Half-metallic ferromagnets
-
Jun
-
R. A. de Groot, F. M. Mueller, P. G. van Engen, and K. H. J. Buschow, "New class of materials: Half-metallic ferromagnets," Phys. Rev. Lett., vol. 50, no. 25, pp. 2024-2027, Jun. 1983.
-
(1983)
Phys. Rev. Lett
, vol.50
, Issue.25
, pp. 2024-2027
-
-
de Groot, R.A.1
Mueller, F.M.2
van Engen, P.G.3
Buschow, K.H.J.4
-
43
-
-
0021124548
-
4
-
Jan
-
4," J. Phys. Soc. Jpn., vol. 53, no. 1, pp. 312-317, Jan. 1984.
-
(1984)
J. Phys. Soc. Jpn
, vol.53
, Issue.1
, pp. 312-317
-
-
Yanase, A.1
Shirote, K.2
-
44
-
-
0022777999
-
CrO2 predicted as a half-metallic ferromagnet
-
Sep
-
K. Schwarz, "CrO2 predicted as a half-metallic ferromagnet," J. Phys. F, Met. Phys., vol. F16, no. 9, pp. L211-L215, Sep. 1986.
-
(1986)
J. Phys. F, Met. Phys
, vol.F16
, Issue.9
-
-
Schwarz, K.1
-
45
-
-
0035334102
-
Electronic and magnetic properties of 3d transition-metal-doped GaAs
-
May
-
M. Shirai, "Electronic and magnetic properties of 3d transition-metal-doped GaAs," Physica E, vol. 10, no. 1, pp. 143-147, May 2001.
-
(2001)
Physica E
, vol.10
, Issue.1
, pp. 143-147
-
-
Shirai, M.1
-
46
-
-
0038047713
-
Possible half-metallic ferromagnetism in zinc blende CrSb and CrAs
-
May
-
M. Shirai, "Possible half-metallic ferromagnetism in zinc blende CrSb and CrAs," J. Appl. Phys., vol. 93, no. 10, pp. 6844-6846, May 2003.
-
(2003)
J. Appl. Phys
, vol.93
, Issue.10
, pp. 6844-6846
-
-
Shirai, M.1
-
47
-
-
0036532154
-
First principles materials design for semiconductor spintronics
-
Apr
-
K. Sato and H. Katayama-Yoshida, "First principles materials design for semiconductor spintronics," Semicond. Sci. Technol., vol. 17, no. 4, pp. 367-376, Apr. 2002.
-
(2002)
Semicond. Sci. Technol
, vol.17
, Issue.4
, pp. 367-376
-
-
Sato, K.1
Katayama-Yoshida, H.2
-
48
-
-
0036581882
-
Subband structure engineering for realizing scaled CMOS with high performance and low power consumption
-
May
-
S. Takagi, "Subband structure engineering for realizing scaled CMOS with high performance and low power consumption," IEICE Trans. Electron., vol. E85-C, no. 5, pp. 1064-1072, May 2002.
-
(2002)
IEICE Trans. Electron
, vol.E85-C
, Issue.5
, pp. 1064-1072
-
-
Takagi, S.1
-
49
-
-
0242498422
-
Characterization of 7-nm-thick strained Ge-on-insulator layer fabricated by Ge-condensation technique
-
Oct
-
S. Nakaharai, T. Tezuka, N. Sugiyama, Y. Moriya, and S. Takagi, "Characterization of 7-nm-thick strained Ge-on-insulator layer fabricated by Ge-condensation technique," Appl. Phys. Lett., vol. 83, no. 17, pp. 3516-3518, Oct. 2003.
-
(2003)
Appl. Phys. Lett
, vol.83
, Issue.17
, pp. 3516-3518
-
-
Nakaharai, S.1
Tezuka, T.2
Sugiyama, N.3
Moriya, Y.4
Takagi, S.5
-
50
-
-
6244304433
-
Tunneling in a finite superlattice
-
Jun
-
R. Tsu and L. Esaki, "Tunneling in a finite superlattice," Appl. Phys. Lett., vol. 22, no. 11, pp. 562-564, Jun. 1973.
-
(1973)
Appl. Phys. Lett
, vol.22
, Issue.11
, pp. 562-564
-
-
Tsu, R.1
Esaki, L.2
-
51
-
-
0033100138
-
CMOS technology-year 2010 and beyond
-
Mar
-
H. Iwai, "CMOS technology-year 2010 and beyond," IEEE J. Solid State Circuits, vol. 34, no. 3, pp. 357-366, Mar. 1999.
-
(1999)
IEEE J. Solid State Circuits
, vol.34
, Issue.3
, pp. 357-366
-
-
Iwai, H.1
-
52
-
-
0019527993
-
Limitations on the performance of field-effect devices for logic applications
-
Feb
-
J. A. Cooper, Jr., "Limitations on the performance of field-effect devices for logic applications," Proc. IEEE, vol. 69, no. 2, pp. 226-231, Feb. 1981.
-
(1981)
Proc. IEEE
, vol.69
, Issue.2
, pp. 226-231
-
-
Cooper Jr., J.A.1
-
53
-
-
0037789231
-
Modeling of ferromagnetic semiconductor devices for spintronics
-
Jun
-
N. Lebedeva and P. Kuivalainen, "Modeling of ferromagnetic semiconductor devices for spintronics," J. Appl. Phys., vol. 93, no. 12, pp. 9845-9864, Jun. 2003.
-
(2003)
J. Appl. Phys
, vol.93
, Issue.12
, pp. 9845-9864
-
-
Lebedeva, N.1
Kuivalainen, P.2
-
54
-
-
0017477639
-
Simple explanation of tunneling spin-polarization of Fe, Co, Ni and its alloys
-
Apr
-
M. B. Stearns, "Simple explanation of tunneling spin-polarization of Fe, Co, Ni and its alloys," J. Mag. Mag. Mater., vol. 5, no. 2, pp. 167-171, Apr. 1977.
-
(1977)
J. Mag. Mag. Mater
, vol.5
, Issue.2
, pp. 167-171
-
-
Stearns, M.B.1
-
55
-
-
0001061226
-
Spin dependent tunneling at finite bias
-
May
-
A. H. Davis and J. M. MacLaren, "Spin dependent tunneling at finite bias," J. Appl. Phys., vol. 87, no. 9, pp. 5224-5226, May 2000.
-
(2000)
J. Appl. Phys
, vol.87
, Issue.9
, pp. 5224-5226
-
-
Davis, A.H.1
MacLaren, J.M.2
-
56
-
-
0035477756
-
Tunnel barrier parameters and magnetoresistance in the parabolic band model
-
1-144 402/4, Aug
-
F. Montaigne, H. Hehn, and A. Schuhl, "Tunnel barrier parameters and magnetoresistance in the parabolic band model," Phys. Rev. B, Condens. Matter, vol. 64, no. 14, pp. 144 402/1-144 402/4, Aug. 2001.
-
(2001)
Phys. Rev. B, Condens. Matter
, vol.64
, Issue.14
, pp. 144-402
-
-
Montaigne, F.1
Hehn, H.2
Schuhl, A.3
-
57
-
-
1842684062
-
Current-induced domain-wall switching in a ferromagnetic semiconductor structure
-
Apr
-
M. Yamanouchi, D. Chiba, F. Matsukura, and H. Ohno, "Current-induced domain-wall switching in a ferromagnetic semiconductor structure," Nature, vol. 428, no. 6982, pp. 539-541, Apr. 2004.
-
(2004)
Nature
, vol.428
, Issue.6982
, pp. 539-541
-
-
Yamanouchi, M.1
Chiba, D.2
Matsukura, F.3
Ohno, H.4
-
58
-
-
37649027698
-
Current-driven magnetization reversal in a ferromagnetic semiconductor (Ga,Mn)As/GaAs/(Ga,Mn) as tunnel junction
-
1-216 602/4, Nov
-
D. Chiba, Y. Sato, T. Kita, F. Matsukura, and H. Ohno, "Current-driven magnetization reversal in a ferromagnetic semiconductor (Ga,Mn)As/GaAs/(Ga,Mn) as tunnel junction," Phys. Rev. Lett., vol. 93, no. 21, pp. 216 602/1-216 602/4, Nov. 2004.
-
(2004)
Phys. Rev. Lett
, vol.93
, Issue.21
, pp. 216-602
-
-
Chiba, D.1
Sato, Y.2
Kita, T.3
Matsukura, F.4
Ohno, H.5
-
59
-
-
0034700461
-
Electric-field control of ferromagnetism
-
Dec
-
H. Ohno, D. Chiba, F. Matsukura, T. Omiya, E. Abe, T. Dietl, Y. Ohno, and K. Ohtani, "Electric-field control of ferromagnetism," Nature vol. 408, no. 6815, pp. 944-946, Dec. 2000.
-
(2000)
Nature
, vol.408
, Issue.6815
, pp. 944-946
-
-
Ohno, H.1
Chiba, D.2
Matsukura, F.3
Omiya, T.4
Abe, E.5
Dietl, T.6
Ohno, Y.7
Ohtani, K.8
-
60
-
-
0041520973
-
Electrical manipulation of magnetization reversal in a ferromagnetic semiconductor
-
Aug
-
D. Chiba, M. Yamanouchi, F. Matsukura, and H. Ohno, "Electrical manipulation of magnetization reversal in a ferromagnetic semiconductor," Science, vol. 301, no. 5635, pp. 943-945, Aug. 2003.
-
(2003)
Science
, vol.301
, Issue.5635
, pp. 943-945
-
-
Chiba, D.1
Yamanouchi, M.2
Matsukura, F.3
Ohno, H.4
-
61
-
-
27944492851
-
A functional MOS transistor featuring gate-level weighted sum and threshold operations
-
Jun
-
T. Shibata and T. Ohmi, "A functional MOS transistor featuring gate-level weighted sum and threshold operations," IEEE Trans. Electron Devices, vol. 39, no. 6, pp. 1444-1455, Jun. 1992.
-
(1992)
IEEE Trans. Electron Devices
, vol.39
, Issue.6
, pp. 1444-1455
-
-
Shibata, T.1
Ohmi, T.2
-
62
-
-
0027556074
-
Neuron MOS binary-logic integrated circuits. I. Design fundamentals and soft-hardware-logic circuit implementation
-
Mar
-
T. Shibata and T. Ohmi, "Neuron MOS binary-logic integrated circuits. I. Design fundamentals and soft-hardware-logic circuit implementation," IEEE Trans. Electron Devices, vol. 40, no. 3, pp. 570-576, Mar. 1993.
-
(1993)
IEEE Trans. Electron Devices
, vol.40
, Issue.3
, pp. 570-576
-
-
Shibata, T.1
Ohmi, T.2
-
63
-
-
0026818082
-
Bit-sliced median filter design based on majority gate
-
Feb
-
C. L. Lee and C. W. Jen, "Bit-sliced median filter design based on majority gate," Proc. Inst. Electr. Eng. - G, vol. 139, no. 1, pp. 63-71, Feb. 1992.
-
(1992)
Proc. Inst. Electr. Eng. - G
, vol.139
, Issue.1
, pp. 63-71
-
-
Lee, C.L.1
Jen, C.W.2
-
64
-
-
0027623456
-
A reprogrammable gate array and applications
-
Jul
-
S. Trimberger, "A reprogrammable gate array and applications," Proc. IEEE, vol. 81, no. 7, pp. 1030-1041, Jul. 1993.
-
(1993)
Proc. IEEE
, vol.81
, Issue.7
, pp. 1030-1041
-
-
Trimberger, S.1
-
65
-
-
0000950606
-
The roles of FPGAs in reprogrammable systems
-
Apr
-
S. Hauck, "The roles of FPGAs in reprogrammable systems," Proc. IEEE, vol. 86, no. 4, pp. 615-618, Apr. 1998.
-
(1998)
Proc. IEEE
, vol.86
, Issue.4
, pp. 615-618
-
-
Hauck, S.1
-
66
-
-
0141942838
-
Reconfigurable computing systems
-
Jul
-
K. Bondalapati and V. K. Prasanna, "Reconfigurable computing systems," Proc. IEEE, vol. 20, no. 7, pp. 1201-1217, Jul. 2002.
-
(2002)
Proc. IEEE
, vol.20
, Issue.7
, pp. 1201-1217
-
-
Bondalapati, K.1
Prasanna, V.K.2
-
67
-
-
79956059593
-
Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor
-
Feb
-
A. T. Hanbicki, B. T. Jonker, G. Itskos, G. Kioseoglou, and A. Petrou, "Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor," Appl Phys. Lett., vol. 80, no. 7, pp. 1240-1242, Feb. 2002.
-
(2002)
Appl Phys. Lett
, vol.80
, Issue.7
, pp. 1240-1242
-
-
Hanbicki, A.T.1
Jonker, B.T.2
Itskos, G.3
Kioseoglou, G.4
Petrou, A.5
-
68
-
-
2542429432
-
Very high spin polarization in GaAs by injection from a (Ga,Mn)As Zener diode
-
May
-
P. Van Dorpe, Z. Lie, W. Van Roy, V. F. Fotsnyi, M. Sawicki, G. Borghs, and J. DeBoeck, "Very high spin polarization in GaAs by injection from a (Ga,Mn)As Zener diode," Appl. Phys. Lett., vol. 84, no. 18, pp. 3495-3497, May 2004.
-
(2004)
Appl. Phys. Lett
, vol.84
, Issue.18
, pp. 3495-3497
-
-
Van Dorpe, P.1
Lie, Z.2
Van Roy, W.3
Fotsnyi, V.F.4
Sawicki, M.5
Borghs, G.6
DeBoeck, J.7
-
69
-
-
0033576696
-
Injection and detection of a spin-polarized current in a light-emitting diode
-
Dec
-
R. Fiederling, M. Keim, G. Reuscher, W. Ossau, G. Schmidt, A. Waag, and L. W. Molenkamp, "Injection and detection of a spin-polarized current in a light-emitting diode," Nature, vol. 402, no. 6763, pp. 787-790, Dec. 1999.
-
(1999)
Nature
, vol.402
, Issue.6763
, pp. 787-790
-
-
Fiederling, R.1
Keim, M.2
Reuscher, G.3
Ossau, W.4
Schmidt, G.5
Waag, A.6
Molenkamp, L.W.7
-
70
-
-
0033576573
-
Electrical spin injection in a ferromagnetic semiconductor heterostructure
-
Dec
-
Y. Ohno, D. K. Young, B. Beschoten, F. Matsukura, H. Ohno, and D. D. Awschalom, "Electrical spin injection in a ferromagnetic semiconductor heterostructure," Nature, vol. 402, no. 6763, pp. 790-792, Dec. 1999.
-
(1999)
Nature
, vol.402
, Issue.6763
, pp. 790-792
-
-
Ohno, Y.1
Young, D.K.2
Beschoten, B.3
Matsukura, F.4
Ohno, H.5
Awschalom, D.D.6
-
71
-
-
33749142719
-
Spin injection and detection in silicon
-
1-026 602/4, Jul
-
I. Zutic, J. Fabian, and S. C. Erwin, "Spin injection and detection in silicon," Phys. Rev. Lett., vol. 97, no. 2, pp. 026 602/1-026 602/4, Jul. 2006.
-
(2006)
Phys. Rev. Lett
, vol.97
, Issue.2
, pp. 026-602
-
-
Zutic, I.1
Fabian, J.2
Erwin, S.C.3
-
72
-
-
33646564981
-
-
T. J. Zega, A. T. Hanbicki, S. C. Erwin, I. Zutic, G. Kioseoglou, C. H. Li, B. T. Jonker, and R. M. Stroud, Determination of interface atomic structure and its impact on spin transport using Z-contrast microscopy and density-functional theory, Phys. Rev. Lett., 96, no. 19, pp. 196 101/1-196 101/4, May 2006.
-
T. J. Zega, A. T. Hanbicki, S. C. Erwin, I. Zutic, G. Kioseoglou, C. H. Li, B. T. Jonker, and R. M. Stroud, "Determination of interface atomic structure and its impact on spin transport using Z-contrast microscopy and density-functional theory," Phys. Rev. Lett., vol. 96, no. 19, pp. 196 101/1-196 101/4, May 2006.
-
-
-
-
73
-
-
42749105179
-
-
V. V. Osipov and A. M. Bratkovsky, Efficient nonlinear room-temperature spin injection from ferromagnets into semiconductors through a modified Schottky barrier, Phys. Rev. B, Condens. Matter 70, no. 20, pp. 205 312/1-205 312/6, 2004.
-
V. V. Osipov and A. M. Bratkovsky, "Efficient nonlinear room-temperature spin injection from ferromagnets into semiconductors through a modified Schottky barrier," Phys. Rev. B, Condens. Matter vol. 70, no. 20, pp. 205 312/1-205 312/6, 2004.
-
-
-
-
74
-
-
42849083805
-
-
Proc. 4th Int. Conf. Phys. and Appl. Spin-Related Phenomena Semicond. (Sendai, 15-18 August 2006), Wiley VCH, M. Tanaka, K. Ito, S. Katsumoto, M. Shirai, and H. Munekata, Eds., special issue of Physica Status Solidi (C) 3, no. 12, pp. 4057-4413, Dec. 2006.
-
Proc. 4th Int. Conf. Phys. and Appl. Spin-Related Phenomena Semicond. (Sendai, 15-18 August 2006), Wiley VCH, M. Tanaka, K. Ito, S. Katsumoto, M. Shirai, and H. Munekata, Eds., special issue of Physica Status Solidi (C) vol. 3, no. 12, pp. 4057-4413, Dec. 2006.
-
-
-
-
75
-
-
33846517688
-
Theory of ferromagnetic semiconductors
-
Jan
-
H. Katayama-Yoshida, K. Sato, T. Fukushima, M. Toyoda, H. Kizaki, V. A. Dinh, and P. H. Dederichs, "Theory of ferromagnetic semiconductors," Phys. Status Solidi, A, vol. 204, no. 1, pp. 15-32, Jan. 2007.
-
(2007)
Phys. Status Solidi, A
, vol.204
, Issue.1
, pp. 15-32
-
-
Katayama-Yoshida, H.1
Sato, K.2
Fukushima, T.3
Toyoda, M.4
Kizaki, H.5
Dinh, V.A.6
Dederichs, P.H.7
-
76
-
-
33746633462
-
x nanocolumns
-
Aug
-
x nanocolumns," Nat. Mater., vol. 5, no. 8, pp. 653-659, Aug. 2006.
-
(2006)
Nat. Mater
, vol.5
, Issue.8
, pp. 653-659
-
-
Jamet, M.1
Barski, A.2
Devillers, T.3
Poydenot, V.4
Duijardin, R.5
Bayle-Guillemaud, P.6
Rothman, J.7
Bellet-Amalric, E.8
Marty, A.9
Cibert, J.10
Mattana, R.11
Tatarenko, S.12
-
77
-
-
33750926530
-
-
3Si thin films on silicon-on-insulator substrates for Si-based spin-electronic device applications, Appl. Phys. Lett., 89, no. 19, pp. 192 503/1-192 503/3, Nov. 2006.
-
3Si thin films on silicon-on-insulator substrates for Si-based spin-electronic device applications," Appl. Phys. Lett., vol. 89, no. 19, pp. 192 503/1-192 503/3, Nov. 2006.
-
-
-
-
78
-
-
0009906761
-
Fundamental obstacle for electrical spin injection from a ferromagnetic metal into a diffusive semiconductor
-
Aug
-
G. Schmidt, D. Ferrand, L. W. Molenkamp, A. T. Filip, and B. J. van Wees, "Fundamental obstacle for electrical spin injection from a ferromagnetic metal into a diffusive semiconductor," Phys. Rev. B, Condens. Matter, vol. 62, no. 8, pp. R4790-R4793, Aug. 2000.
-
(2000)
Phys. Rev. B, Condens. Matter
, vol.62
, Issue.8
-
-
Schmidt, G.1
Ferrand, D.2
Molenkamp, L.W.3
Filip, A.T.4
van Wees, B.J.5
-
79
-
-
2342457032
-
A new route to zero-barrier metal source/drain MOSFETs
-
Mar
-
D. Connelly, C. Faulkner, D. E. Grupp, and J. S. Harris, "A new route to zero-barrier metal source/drain MOSFETs," IEEE Trans. Nanotechnol., vol. 3, no. 1, pp. 98-104, Mar. 2004.
-
(2004)
IEEE Trans. Nanotechnol
, vol.3
, Issue.1
, pp. 98-104
-
-
Connelly, D.1
Faulkner, C.2
Grupp, D.E.3
Harris, J.S.4
-
80
-
-
33645521777
-
Fermi-level depinning for low-barrier Schottky source/drain transistors
-
1-012 105/3, Jan
-
D. Connelly, C. Faulkner, P. A. Clifton, and D. E. Grupp, "Fermi-level depinning for low-barrier Schottky source/drain transistors," Appl. Phys. Lett., vol. 88, no. 1, pp. 012 105/1-012 105/3, Jan. 2006.
-
(2006)
Appl. Phys. Lett
, vol.88
, Issue.1
, pp. 012-105
-
-
Connelly, D.1
Faulkner, C.2
Clifton, P.A.3
Grupp, D.E.4
-
81
-
-
33749989400
-
Tunable spin-tunnel contacts to silicon using low-work-function ferromagnets
-
Oct
-
B.-C. Min, K. Motohashi, C. Lodder, and R. Jansen, "Tunable spin-tunnel contacts to silicon using low-work-function ferromagnets," Nat. Mater., vol. 5, no. 10, pp. 817-822, Oct. 2006.
-
(2006)
Nat. Mater
, vol.5
, Issue.10
, pp. 817-822
-
-
Min, B.-C.1
Motohashi, K.2
Lodder, C.3
Jansen, R.4
-
82
-
-
25444520290
-
Low temperature measurements of Schottky-barrier SOI-MOSFETs with dopant segregation
-
Sep
-
M. Zhang, J. Knoch, Q. T. Zhao, A. Fox, S. Lenk, and S. Mantl, "Low temperature measurements of Schottky-barrier SOI-MOSFETs with dopant segregation," Electron. Lett., vol. 41, no. 19, pp. 1085-1086, Sep. 2005.
-
(2005)
Electron. Lett
, vol.41
, Issue.19
, pp. 1085-1086
-
-
Zhang, M.1
Knoch, J.2
Zhao, Q.T.3
Fox, A.4
Lenk, S.5
Mantl, S.6
-
83
-
-
29744445306
-
-
J. Knoch, M. Zhang, Q. T. Zhao, S. Lenk, S. J. Mantl, and J. Appenzeller, Effective Schottky barrier lowering in silicon-on-insulator Schottky-barrier metal-oxide-semiconductor field-effect transistors using dopant segregation, Appl. Phys. Lett., 87, no. 26, pp. 263 505/1-263 505/3, Dec. 2005.
-
J. Knoch, M. Zhang, Q. T. Zhao, S. Lenk, S. J. Mantl, and J. Appenzeller, "Effective Schottky barrier lowering in silicon-on-insulator Schottky-barrier metal-oxide-semiconductor field-effect transistors using dopant segregation," Appl. Phys. Lett., vol. 87, no. 26, pp. 263 505/1-263 505/3, Dec. 2005.
-
-
-
-
84
-
-
33751329016
-
Spin MOSFETs using ferromagnetic Schottky barrier contacts for the source and drain
-
S. Sugahara and M. Tanaka, "Spin MOSFETs using ferromagnetic Schottky barrier contacts for the source and drain," in Proc. 63rd DRC, 2005, pp. 211-212.
-
(2005)
Proc. 63rd DRC
, pp. 211-212
-
-
Sugahara, S.1
Tanaka, M.2
-
85
-
-
34247860437
-
Perspective on field-effect spin-transistors
-
Dec
-
S. Sugahara, "Perspective on field-effect spin-transistors," Phys. Status Solidi, C, vol. 3, no. 12, pp. 4405-4413, Dec. 2006.
-
(2006)
Phys. Status Solidi, C
, vol.3
, Issue.12
, pp. 4405-4413
-
-
Sugahara, S.1
-
86
-
-
2942546159
-
Substantial reduction of critical current for magnetization switching in an exchange biased spin valve
-
Jun
-
Y. Jiang, T. Nozaki, S. Abe, T. Ochiai, A. Hirohata, N. Tezuka, and K. Inomata, "Substantial reduction of critical current for magnetization switching in an exchange biased spin valve," Nat. Mater., vol. 3, no. 6, pp. 361-364, Jun. 2004.
-
(2004)
Nat. Mater
, vol.3
, Issue.6
, pp. 361-364
-
-
Jiang, Y.1
Nozaki, T.2
Abe, S.3
Ochiai, T.4
Hirohata, A.5
Tezuka, N.6
Inomata, K.7
|