Low temperature measurements of Schottky-barrier SOI-MOSFETs with dopant segregation

Electronics Letters

Volumn 41, Issue 19, 2005, Pages 1085-1086

  Zhang, M ^a   Knoch, J ^a   Zhao, Q T ^a   Fox, A ^a   Lenk, St ^a   Mantl, S ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; GATES (TRANSISTOR); LOW TEMPERATURE EFFECTS; NICKEL; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY;

DOPANT SEGREGATION; DRAIN CONTACTS; GATE VOLTAGES; SCHOTTKY-BARRIER HEIGHT (SBH);

MOSFET DEVICES;

EID: 25444520290     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20052665     Document Type: Article

References (9)

1. Kedzierski, J., Xuan, P., Anderson, E.H., and Bokor, J.: 'Complementary suicide source/drain thin-body MOSFETs for the 20 nm gate length regime', Int. Electron Devices Meet., Tech. Dig., 2000, pp. 57-60
2. Larrieu, G., and Dubois, E.: 'Schottky-barrier source/drain MOSFETs on ultrathin SOI body with a tungsten metallic midgap gate', IEEE Electron Device Lett., 2004, 25, pp. 801-803
3. 2 in source/drain contacts of ultra-thin SOI MOSFETs', Mater. Sci. Eng., 2002, B89, pp. 378-381
4. Zhu, S., Chen, J., Li, M.-F., and Lee, S.J.: 'N-type Schottky barrier source/drain MOSFET using ytterbium suicide', IEEE Electron Device Lett., 2004, 25, pp. 565-567
5. Zhang, M., Knoch, J., Zhao, Q.T., Lenk, St., Appenzeller, J., Breuer, U., and Mantl, S.: 'Dopant segregation in Schottky barrier SOI-MOSFETs'. Proc. 6th Int. Conf. on Ultimate Integration of Silicon, 2005, pp. 23-26
6. Calvet, L.E., Luebben, H., Reed, M.A., Wang, C., Snyder, J.P., and Tucker, J.R.: 'Subthreshold and scaling of PtSi Schottky barrier MOSFETs', Superlattices Microstruct., 2000, 28, pp. 501-506
7. Tao, M., Agarwal, S., Udeshi, D., and Basit, N.: 'Low Schottky barriers on n-type silicon (001)', Appl. Phys. Lett., 2003, 83, pp. 2593-2595
8. Knoch, J., and Appenzeller, J.: 'Impact of the channel thickness on the performance of Schottky barrier metal-oxide-semiconductor field-effect transistors', Appl. Phys. Lett., 2002, 81, pp. 3082-3084
9. Appenzeller, J., Radosavljevic, M., Knoch, J., and Avouris, P.: 'Tunneling versus thermionic emission in one-dimensional semiconductors', Phys. Rev. Lett., 2004, 92, pp. 048301/1-4.