Schottky barrier height of ferromagnet/Si(001) junctions

Applied Physics Letters

Volumn 89, Issue 7, 2006, Pages

  Sugiura, Kuniaki ^a   Nakane, Ryosho ^a,b   Sugahara, Satoshi ^a   Tanaka, Masaaki ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FERROMAGNETIC MATERIALS; MOLECULAR BEAM EPITAXY; MOSFET DEVICES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON;

FERROMAGNETS; SCHOTTKY BARRIER HEIGHT; SPIN ELECTRONIC DEVICES;

SEMICONDUCTOR JUNCTIONS;

EID: 33747597312     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2337562     Document Type: Article

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