Current-induced domain-wall switching in a ferromagnetic semiconductor structure

Nature

Volumn 428, Issue 6982, 2004, Pages 539-541

  Yamanouchi, M ^a   Chiba, D ^a   Matsukura, F ^a,b   Ohno, H ^a,b  

^a TOHOKU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC CURRENTS; INTEGRATED CIRCUITS; MAGNETIC FIELDS; MAGNETIC STORAGE; MAGNETIZATION; TORQUE;

CURRENT PULSES; ELECTRIC PULSES;

FERROMAGNETIC MATERIALS;

FERROMAGNETIC MATERIAL;

SEMICONDUCTOR INDUSTRY;

ARTICLE; DENSITY; ELECTRIC CURRENT; MAGNETIC FIELD; MAGNETISM; PHYSICAL CHEMISTRY; PHYSICS; PRIORITY JOURNAL; SEMICONDUCTOR;

EID: 1842684062     PISSN: 00280836     EISSN: None     Source Type: Journal    
DOI: 10.1038/nature02441     Document Type: Article

References (29)

1. Slonczewski, J. Current-driven excitation of magnetic multilayer. J. Magn. Magn. Mater. 159, L1-L7 (1996).
2. Berger, L. Emission of spin waves by a magnetic multilayer traversed by a current. Phys. Rev. B 54, 9353-9358 (1996).
3. Tsoi, M. et al. Excitation of a magnetic multilayer by an electric current. Phys. Rev. Lett. 80, 4281-4284 (1998) erratum (81), 493 (1998).
4. Albert, F. J., Katine, J. A., Buhrman, R. A. & Ralph, D. C. Spin-polarized current switching of a Co thin film nanomagnet. Appl. Phys. Lett. 77, 3809-3811 (2000).
5. Sze, S. M. (ed.) VLSI Technology 412 (McGraw-Hill, New York, 1988).
6. Michael, N. L., Kim, C. U., Gillespie, P. & Augur, R. in Proc. Advanced Metallization Conf., 29-30 Oct. 2002, Tokyo (ed. Zaima, S.)) 42-43 (Office Sofiel, Tokyo, 2002).
7. Berger, L. Exchange interaction between ferromagnetic domain wall and electric current in very thin metallic films. J. Appl. Phys. 55, 1954-1956 (1984).
8. Freitas, P. P. & Berger, L. Observation of s-d exchange force between domain wall and electric current in very thin permalloy films. J. Appl. Phys. 57, 1266-1269 (1985).
9. Gan, L., Chung, S. H., Aschenbach, K. H., Dreyer, M. & Gomez, R. D. Pulsed-current-induced domain wall propagation in permalloy patterns observed using magnetic force microscope. IEEE Trans. Mag. 36, 3047-3049 (2000).
10. Grollier, J. et al. Switching a spin valve back and forth by current-induced domain wall motion. Appl. Phys. Lett. 83, 509-511 (2003).
11. Tsoi, M., Fontana, R. E. & Parkin, S. S. P. Magnetic domain wall motion triggered by an electric current. Appl. Phys. Lett. 83, 2617-2619 (2003).
12. Vernier, N., Allwood, D. A., Atkinson, D., Cooke, M. D. & Cowburn, R. P. Domain wall propagation in magnetic nanowires by spin polarized current injection. Preprint at 〈http://lanl.arXiv.org/abs/cond-mat/0304549〉 (2003).
13. Yamaguchi, A. et al. Real-space observation of current-driven domain wall motion in submicron magnetic wires. Phys. Rev. Lett. 92, 077205 (2004).
14. Ohno, H. Making nonmagnetic semiconductors ferromagnetic. Science 281, 951-956 (1998).
15. Dietl, T., Ohno, H., Matsukura, F., Cibert, J. & Ferrand, D. Zener model description of ferromagnetism in zinc-blende magnetic semiconductors. Science 287, 1019-1022 (2000).
16. Dietl, T., Ohno, H. & Matsukura, F. Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors. Phys. Rev. B 63, 195205 (2001).
17. Chiba, D., Takamura, K., Matsukura, F. & Ohno, H. Effect of low-temperature annealing on (Ga,Mn)As trilayer structures. Appl. Phys. Lett. 82, 3020-3022 (2003).
18. Labaye, Y., Berger, L. & Coey, J. M. D. Domain walls in ferromagnetic nanoconstriction. J. Appl. Phys. 91, 5341-5346 (2002).
19. Salhi, E. & Berger, L. Current-induced displacements of Bloch walls in Ni-Fe films of thickness 120-740 nm. J. Appl. Phys. 76, 4787-4792 (1994).
20. Berger, L. Prediction of a domain-drag effect in uniaxial, non-compensated, ferromagnetic metals. J. Phys. Chem. Solids 35, 947-956 (1974).
21. Berger, L. Motion of magnetic domain wall traversed by fast-rising current pulses. J. Appl. Phys. 71, 2721-2726 (1992).
22. Tatara, G. & Kohno, H. Theory of current-driven domain wall motion: spin transfer versus momentum transfer. Phys. Rev. Lett. 92, 086601 (2004).
23. Ohno, H. et al. Electric-field control of ferromagnetism. Nature 408, 944-946 (2000).
24. Chiba, D., Yamanouchi, M., Matsukura, F. & Ohno, H. Electrical manipulation of magnetization reversal in a ferromagnetic semiconductor. Science 301, 943-945 (2003).
25. Tang, H. X., Kawakami, R. K., Awschalom, D. D. & Roukes, M. L. Giant planar Hall effect in epitaxial (Ga,Mn)As devices. Phys. Rev. Lett. 90, 107201 (2003).
26. Ohno, Y. et al. Electrical spin injection in a ferromagnetic semiconductor heterostructure. Nature 402, 790-792 (1999).
27. Flatté, M. E., Yu, Z. G., Johnston-Halperin, E. & Awschalom, D. D. Theory of semiconductor magnetic bipolar transistors. Appl. Phys. Lett. 82, 4740-4742 (2003).
28. xTe. Phys. Rev. Lett. 90, 207202 (2003).
29. Pearton, S. J. et al. Wide band gap ferromagnetic semiconductors and oxides. J. Appl. Phys. 93, 1-13 (2003).