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Volumn 80, Issue 7, 2002, Pages 1240-1242

Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER CONTACTS; CARRIER SPIN POLARIZATION; CIRCULARLY POLARIZED LIGHT; ELECTRICAL SPIN INJECTION; FERROMAGNETIC METAL; INJECTION EFFICIENCY; MAGNETIC METALS; REVERSE BIAS; ROOM TEMPERATURE; SCHOTTKY BARRIERS; SELECTION RULES; SEMICONDUCTOR PROCESSING TECHNOLOGIES; SPIN TRANSPORT; SPIN-POLARIZED ELECTRONS; TUNNEL BARRIER;

EID: 79956059593     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1449530     Document Type: Article
Times cited : (687)

References (26)
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    • Rashba, E.I.1
  • 21
    • 79957955950 scopus 로고    scopus 로고
    • The sign convention is based on the ZnMnSe/AlGaAs spin LED system described in Ref. 5, where spin-down carriers are injected when the magnetic field is applied along the surface normal
    • The sign convention is based on the ZnMnSe/AlGaAs spin LED system described in Ref. 5, where spin-down carriers are injected when the magnetic field is applied along the surface normal.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.