Damage accumulation in nitrogen implanted 6H-SiC: Dependence on the direction of ion incidence and on the ion fluence

Journal of Applied Physics

Volumn 101, Issue 2, 2007, Pages

  Zolnai, Z ^a   Ster, A ^a   Khanh N Q ^a   Battistig, G ^a   Lohner, T ^a   Gyulai, J ^a   Kotai E ^a   Posselt, M ^b  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BACKSCATTERING; COMPUTER SIMULATION; CRYSTALLOGRAPHY; ION IMPLANTATION;

AXIAL CHANNELING DIRECTION; DEPTH RESOLUTION; DISORDER ACCUMULATION; NITROGEN IMPLANTATION;

SILICON CARBIDE;

EID: 33847721433     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2409609     Document Type: Article

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