Ion implantation induced damage in silicon carbide studied by Non-Rutherford elastic backscattering

Proceedings of the International Conference on Ion Implantation Technology

Volumn , Issue , 2000, Pages 131-134

  Szilagyi E ^a   Kotai E ^a   Khanh N Q ^b   Zolnai, Z ^b   Battistig, G ^b   Lohner, T ^b   Gyulai, J ^b  

^a WIGNER RESEARCH CENTRE FOR PHYSICS   (Hungary)

^b RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC NUMBERS; CROSS SECTION; ELASTIC BACKSCATTERING; ENHANCEMENT FACTOR; IMPLANTATION INDUCED DAMAGES; NUCLEAR RESONANCES; ROOM TEMPERATURE; SCATTERING CROSS SECTION; SUB-LATTICES;

ATOMS; ION IMPLANTATION; RESONANCE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON CARBIDE;

ION BOMBARDMENT;

EID: 78649856238     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2000.924108     Document Type: Conference Paper

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