Amorphization and defect recombination in ion implanted silicon carbide

Journal of Applied Physics

Volumn 81, Issue 11, 1997, Pages 7181-7185

  Grimaldi, M G ^a,b   Calcagno, L ^a,b   Musumeci, P ^a,b   Frangis, N ^c   Van Landuyt, J ^d  

^a UNIVERSITY OF CATANIA   (Italy)

^b INFM   (Italy)

^c ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^d UNIVERSITY OF ANTWERP   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001419388     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365317     Document Type: Article

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