Effect of crystal orientation on the implant profile of 60 keV Al into 4H-SiC crystals

Journal of Applied Physics

Volumn 93, Issue 11, 2003, Pages 8914-8917

  Wong Leung, J ^a   Janson, M S ^b   Svensson, B G ^b,c  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^c UNIVERSITY OF OSLO   (Norway)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; ION IMPLANTATION; RANDOM PROCESSES; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON WAFERS;

PLANAR CHANNELS;

SILICON CARBIDE;

EID: 0038003970     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1569972     Document Type: Article

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