Ion-implantation-induced extended defect formation in (0001) and (11 2̄ 0) 4H-SiC

Physical Review B - Condensed Matter and Materials Physics

Volumn 71, Issue 16, 2005, Pages

  Wong Leung, J ^a   Linnarsson, M K ^b   Svensson, B G ^c   Cockayne, D J H ^d  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^c UNIVERSITY OF OSLO   (Norway)

^d UNIVERSITY OF OXFORD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 28744451428     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.71.165210     Document Type: Article

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