Deuterium channeling analysis for He+-implanted 6H-SiC

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 161, Issue , 2000, Pages 501-504

  Jiang, W ^a   Thevuthasan, S ^a   Weber, W J ^a   Grotzschel R ^b  

^a PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CRYSTAL DEFECTS; CRYSTAL LATTICES; DEUTERIUM; HELIUM; ION BEAMS; ION IMPLANTATION; POSITIVE IONS; RADIATION DAMAGE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON;

DEUTERIUM CHANNELING ANALYSIS; NUCLEAR REACTION ANALYSIS;

SILICON CARBIDE;

EID: 0033879216     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(99)00692-8     Document Type: Article

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