Annealing behavior of the carbon vacancy in electron-irradiated 4H-SiC

Journal of Applied Physics

Volumn 96, Issue 4, 2004, Pages 2406-2408

  Zolnai, Z ^a,b   Son, N T ^a   Hallin, C ^a   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL LATTICES; ELECTRON IRRADIATION; FERMI LEVEL; MAGNETIC FIELDS; PARAMAGNETIC RESONANCE; THERMAL EFFECTS;

DONORS; LIGHT EXCITATION; VACANCIES; WAVELENGTHS;

SILICON CARBIDE;

EID: 4344699400     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1771472     Document Type: Article

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