Differentiation between C and Si related damage centres in 4H and 6H SiC by the use of 90-300 kV electron irradiation followed by low temperature photoluminescence microscopy

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 381-384

  Steeds, J W ^a   Carosella, F ^a   Evans, G A ^a   Ismail, M M ^a   Danks, L R ^a   Voegeli, W ^a  

^a UNIVERSITY OF BRISTOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; ANISOTROPY; CARBON; CRYSTALLOGRAPHY; ELECTRON IRRADIATION; LOW TEMPERATURE EFFECTS; PHOTOLUMINESCENCE; PHOTONS; POINT DEFECTS; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

CARBON DISPLACEMENT THRESHOLD; DAMAGE CENTERS; DISPLACEMENT ENERGIES; ELECTRON BOMBARDMENT; LOW TEMPERATURE PHOTOLUMINESCENCE MICROSCOPY; SILICON DISPLACEMENT THRESHOLD;

SILICON CARBIDE;

EID: 0035129582     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.353-356.381     Document Type: Article

References (6)

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