Determination of parameters for channeling of protons in SiC polytype crystals in the backscattering geometry

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 184, Issue 3, 2001, Pages 319-326

  Kokkoris, M ^a   Kossionides, S ^a   Vlastou, R ^b   Aslanoglou, X A ^c   Grotzschel R ^d   Nsouli, B ^e   Kuznetsov, A ^f   Petrovic, S ^g   Paradellis, Th ^a  

^a TANDEM Accelerator   (Serbia)

^b NATIONAL TECHNICAL UNIVERSITY OF ATHENS   (Greece)

^c UNIVERSITY OF IOANNINA   (Greece)

^d Institute of Ion Beam Physics and Material Analysis   (Serbia)

^e NATIONAL COUNCIL FOR SCIENTIFIC RESEARCH   (Lebanon)

^f ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^g UNIVERSITY OF BELGRADE   (Serbia)

Author keywords

Backscattering; Channeling; Nuclear resonance; Polytype; Protons; SiC crystal

Indexed keywords

BACKSCATTERING; CRYSTALLOGRAPHY; DEPOSITION; POLYCRYSTALS; SILICON CARBIDE; SPECTRUM ANALYSIS; THIN FILMS;

PROTON CHANNELING;

PROTONS;

EID: 0035498448     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)00727-3     Document Type: Article

References (30)