Investigation of ion implantation-induced damage in the carbon and silicon sublattices of 6H-SiC

Diamond and Related Materials

Volumn 11, Issue 3-6, 2002, Pages 1239-1242

  Zolnai, Z ^a   Khanh N Q ^a   Szilagyi E ^b   Kotai E ^b   Ster, A ^a   Posselt, M ^c   Lohner, T ^a   Gyulai, J ^a  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^b WIGNER RESEARCH CENTRE FOR PHYSICS   (Hungary)

^c INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

Backscattering spectrometry; Defects; Ion implantation; Silicon carbide

Indexed keywords

COMPUTER SIMULATION; CRYSTAL DEFECTS; ION IMPLANTATION; SINGLE CRYSTALS; SPECTROMETRY;

ION BEAM ENERGY;

SUPERLATTICES;

ION IMPLANTATION;

EID: 0036508298     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(02)00007-9     Document Type: Article

References (23)