Rutherford backscattering spectrometry channeling study of ion-irradiated 6H-SiC

Surface and Interface Analysis

Volumn 27, Issue 4, 1999, Pages 179-184

  Jiang, W ^a   Weber, W J ^a   Thevuthasan, S ^a   McCready, D E ^a  

^a PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; CARBON; CRYSTAL DEFECTS; HELIUM; ION BOMBARDMENT; RADIATION EFFECTS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON; SINGLE CRYSTALS; SPECTROMETRY; THERMAL EFFECTS;

ION CHANNELING;

SILICON CARBIDE;

EID: 0032628942     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1096-9918(199904)27:4<179::AID-SIA459>3.0.CO;2-1     Document Type: Article

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