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Physical Review B - Condensed Matter and Materials Physics

Volumn 62, Issue 15, 2000, Pages 10126-10134

Proton-implantation-induced defects in n-type 6H- and 4H-SiC: An electron paramagnetic resonance study

(4) von Bardeleben, H J a Cantin, J L a Vickridge, I a Battistig, G b

a SORBONNE UNIVERSITÉ (France)

b RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; SILICON;

ANALYTIC METHOD; ARTICLE; CHEMICAL STRUCTURE; CONDUCTANCE; ELECTRIC POTENTIAL; ELECTRON SPIN RESONANCE; PROTON TRANSPORT; STRUCTURE ANALYSIS; TEMPERATURE;

EID: 0034667090 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevB.62.10126 Document Type: Article

Times cited : (83)

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