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Physical Review B - Condensed Matter and Materials Physics

Volumn 62, Issue 16, 2000, Pages 10841-10846

Vacancy defects in p-type 6H-SiC created by low-energy electron irradiation

(4) von Bardeleben, H J a Cantin, J L a Henry, L b Barthe, M F b

a SORBONNE UNIVERSITÉ (France)

b CNRS (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; SILICON;

ARTICLE; ELECTRON SPIN RESONANCE; ELECTRON TRANSPORT; ENERGY; IRRADIATION; SEMICONDUCTOR; SPECTROSCOPY; TEMPERATURE;

EID: 0034666953 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevB.62.10841 Document Type: Article

Times cited : (77)

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