Atomistic simulation of ion implantation into different polytypes of SiC

Proceedings of the International Conference on Ion Implantation Technology

Volumn , Issue , 2000, Pages 220-223

  Ster, A ^a   Posselt, M ^b   Hallen A ^c   Janson, M ^c  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^c ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMISTIC SIMULATIONS; DOPANT PROFILE; EXPERIMENTAL DATA; POLYTYPES; POLYTYPISM; RANGE PROFILES; SIMULATION RESULT;

POLYMORPHISM; SILICON CARBIDE;

ION IMPLANTATION;

EID: 78649828824     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2000.924129     Document Type: Conference Paper

References (11)

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