He ion beam density effect on damage induced in SiC during Rutherford backscattering measurement

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 161, Issue , 2000, Pages 424-428

  Khanh N Q ^a   Zolnai, Z ^b   Lohner, T ^a   Toth L ^a   Dobos, L ^a   Gyulai, J ^a  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^b BUDAPEST UNIVERSITY OF TECHNOLOGY AND ECONOMICS   (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

DOSIMETRY; HELIUM; ION BOMBARDMENT; RADIATION DAMAGE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON CARBIDE;

BEAM INDUCED DAMAGE; CHANNELING EFFECT MEASUREMENT; ION BEAM DENSITY EFFECT;

ION BEAMS;

EID: 0242605551     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(99)00778-8     Document Type: Article

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