Formation and annealing of nitrogen-related complexes in SiC

Physical Review B - Condensed Matter and Materials Physics

Volumn 67, Issue 20, 2003, Pages

  Gerstmann, U ^a   Rauls, E ^a   Frauenheim, Th ^a   Overhof, H ^a  

^a UNIVERSITY OF PADERBORN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON DERIVATIVE;

ARTICLE; CALCULATION; COMPLEX FORMATION; DISSOCIATION; ELECTRICITY; ENERGY; HIGH TEMPERATURE; MATHEMATICAL ANALYSIS; METAL BINDING; POLARIMETRY; TEMPERATURE DEPENDENCE;

EID: 0037964988     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.67.205202     Document Type: Article

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