Self-diffusion in isotopically enriched silicon carbide and its correlation with dopant diffusion

Journal of Applied Physics

Volumn 96, Issue 3, 2004, Pages 1458-1463

  Ruschenschmidt K ^a   Bracht, H ^a   Stolwijk, N A ^a   Laube, M ^b   Pensl, G ^b   Brandes, G R ^c  

^a UNIVERSITY OF MÜNSTER   (Germany)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^c ENTEGRIS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION ANNEALING; DOPANT DIFFUSION; STOCHIOMETRIC MIXTURES; THERMAL ANNEALING;

ANNEALING; CARBON; DIFFUSION IN SOLIDS; DOPING (ADDITIVES); ENTHALPY; ENTROPY; SECONDARY ION MASS SPECTROMETRY; SINGLE CRYSTALS; SOLVENTS; THERMAL EFFECTS; VACUUM; VAPOR PHASE EPITAXY;

SILICON CARBIDE;

EID: 4143144315     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1766101     Document Type: Article

References (27)

1. M. V. Rao, J. A. Gardner, P. H. Chi, O. W. Holland, G. Kekner, J. Kretchmer, and M. Ghezzo, J. Appl. Phys. 81, 6635 (1997).
2. M. Laube, G. Pensl, and H. Itoh, Appl. Phys. Lett. 74, 2292 (1999).
3. M. S. Janson, M. K. Linnarsson, A. Hallen, B. G. Svensson, N. Nordell, and H. Bleichner, Appl. Phys. Lett. 76, 1434 (2000).
4. R. N. Ghoshtagore and R. L. Coble, Phys. Rev. 143, 623 (1966).
5. J. D. Hong and R. F. Davis, J. Am. Ceram. Soc. 63, 546 (1980).
6. J. D. Hong, R. F. Davis, and D. E. Newbury, J. Mater. Sci. 16, 2485 (1981).
7. D. P. Birnie III, J. Am. Ceram. Soc. 69, C-33 (1986).
8. A. O. Konstantinov, Sov. Phys. Semicond. 26, 151 (1992).
9. A. O. Konstantinov, Sov. Phys. Semicond. 22, 102 (1988).
10. H. Bracht, N. A. Stolwijk, M. Laube, and G. Pensl, Appl. Phys. Lett. 77, 3188 (2000).
11. K. Rüschenschmidt, H. Bracht, M. Laube, N. A. Stolwijk, and G. Pensl, Physica B 734, 308 (2001).
12. H. Bracht, N. A. Stolwijk, M. Laube, and G. Pensl, Mater. Sci. Forum 353-356, 327 (2001).
13. A. Mattausch, M. Bockstedte, and O. Pankratov, Mater. Sci. Forum 353-356, 323 (2001).
14. M. Bockstedte, A. Mattausch, and O. Pankratov, Phys. Rev. B 68, 205201 (2003).
15. Due to the higher vapor pressure of Si compared to C, Si preferentially evaporates during the diffusion anneal at high temperatures.
16. M. Bockstedte, A. Mattausch, and O. Pankratov, Mater. Sci. Forum 353-356, 447 (2001).
17. R. Rurali, P. Godignon, J. Rebollo, P. Ordejón, and E. Hernández, Appl. Phys. Lett. 81, 2989 (2002).
18. B. Sadigh, T. J. Lenosky, S. K. Theiss, M.-J. Caturla, T. D. de la Rubia, and M. A. Foad, Phys. Rev. Lett. 83, 4341 (1999).
19. W. Windl, M. M. Bunea, R. Stumpf, S. T. Dunham, and M. P. Masquelier, Phys. Rev. Lett. 83, 4345 (1999).
20. A. v. Duijn-Arnold, T. Ikoma, O. G. Poluektov, P. G. Baranov, E. N. Mokhov, and J. Schmidt, Phys. Rev. B 57, 1607 (1998), and references therein.
21. A. v. Duijn-Arnold, J. Mol, R. Verberk, J. Schmidt, E. N. Mokhov, and P. G. Baranov, Phys. Rev. B 60, 15829 (1999), and references therein.
22. B. Aradi, A. Gali, P. Deák, E. Rauls, Th. Frauenheim, and N. T. Son, Mater. Sci. Forum 353-356, 455 (2001).
23. S. G. Sridhara, L. L. Clemen, R. P. Devaty, W. J. Choyke, D. J. Larkin, H. S. Kong, T. Troffer, and G. Pensl, J. Appl. Phys. 83, 7909 (1998).
24. T. Troffer, M. Schadt, T. Frank, H. Itoh, G. Pensl, J. Heindl, H. P. Strunk, and M. Maier, Phys. Status Solidi A 162, 277 (1997).
25. H. Itoh, T. Troffer, Ch. Peppermuller, and G. Pensl, Appl. Phys. Lett. 73, 1427 (1998).
26. M. Gong, C. V. Reddy, C. D. Beling, S. Fung, G. Brauer, H. Wirth, and W. Skorupa, Appl. Phys. Lett. 72, 2739 (1998).
27. Y. Gao, S. I. Soloviev, and T. S. Sudarshan, Appl. Phys. Lett. 83, 905 (2003).