Thermally grown ruthenium oxide thin films

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 5, 2004, Pages 2319-2325

  Jelenkovic, Emil V ^a   Tong, K Y ^a  

^a HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CAPACITANCE; CMOS INTEGRATED CIRCUITS; CURRENT VOLTAGE CHARACTERISTICS; DIFFRACTOMETERS; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; MOS CAPACITORS; RAMAN SPECTROSCOPY; RUTHENIUM COMPOUNDS; SILICON WAFERS; SPUTTERING; THERMOOXIDATION; TRANSISTORS; X RAY DIFFRACTION ANALYSIS;

FULL WIDTH AT HALF MAXIMUM (FWHM); P-CHANNEL TRANSISTORS; RUTHENIUM OXIDE THIN FILMS; VAN DER PAUW TECHNIQUES; WORK FUNCTION;

THIN FILMS;

EID: 9744244957     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1783319     Document Type: Article

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