Metal oxide gate electrodes for advanced CMOS technology

Annalen der Physik (Leipzig)

Volumn 13, Issue 1-2, 2004, Pages 31-34

  Frohlich K ^a   Husekova K ^a   Oszi, Z ^a   Hooker, J C ^b   Fanciulli, M ^c   Wiemer, C ^c   Dimoulas, A ^d   Vellianitis, G ^d   Roozeboom, F ^b  

^a INSTITUTE OF CHEMISTRY   (Slovakia)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

^c LABORATORIO MDM   (Italy)

^d INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY   (Greece)

Author keywords

CMOS; Conducting oxides; MOCVD

Indexed keywords

CAPACITANCE; ELECTRIC POTENTIAL; ELECTRODES; GATES (TRANSISTOR); METALLORGANIC CHEMICAL VAPOR DEPOSITION; POLYSILICON; RUTHENIUM COMPOUNDS; SEMICONDUCTOR DOPING; STRONTIUM COMPOUNDS; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

CONDUCTING OXIDES; GATE ELECTRODES;

CMOS INTEGRATED CIRCUITS;

EID: 1242329382     PISSN: 00033804     EISSN: None     Source Type: Journal    
DOI: 10.1002/andp.200310038     Document Type: Conference Paper

References (6)

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