Effect of RuO2 electrode on laser-MBE prepared HfO2 gate dielectrics

Microelectronic Engineering

Volumn 83, Issue 2, 2006, Pages 371-375

  Lu, Y K ^a   Zhu, W ^a   Chen, X F ^a   Gopalkrishnan, R ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Gate dielectrics; HfO2; Laser molecular beam epitaxy; Metal gate; RuO2

Indexed keywords

DIELECTRIC DEVICES; ELECTRIC POTENTIAL; ELECTRODES; LASER THEORY; MOLECULAR BEAM EPITAXY; MOS DEVICES; SPUTTERING;

GATE DIELECTRICS; HFO2; METAL GATES; RUO2;

RUTHENIUM COMPOUNDS;

EID: 32044464294     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.10.005     Document Type: Article

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