Growth of Ru/RuO2 layers with atomic vapor deposition on plain wafers and into trench structures

Microelectronic Engineering

Volumn 83, Issue 11-12, 2006, Pages 2277-2281

  Manke, C ^a   Boissiere O ^a   Weber, U ^a   Barbar, G ^a   Baumann, P K ^a   Lindner, J ^a   Tapajna, M ^b   Frohlich K ^b  

^a AIXTRON AG   (Germany)

^b INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

Author keywords

Atomic vapor deposition; AVD; Metal gate stack; Ruthenium; Ruthenium oxide

Indexed keywords

ELECTRIC CONDUCTIVITY; EPITAXIAL GROWTH; KINETIC ENERGY; LIQUID CRYSTALS; SILICON WAFERS; SURFACE ROUGHNESS; VAPOR DEPOSITION;

ATOMIC VAPOR DEPOSITION; METAL GATE STACK; RUTHENIUM OXIDE;

RUTHENIUM COMPOUNDS;

EID: 33751222908     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2006.10.018     Document Type: Article

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