Metallorganic chemical vapor deposition of hafnium silicate thin films using a dual source dimethyl-alkylamido approach

Journal of the Electrochemical Society

Volumn 153, Issue 11, 2006, Pages

  Consiglio, Steven ^a   Papadatos, Filippos ^a   Naczas, Sebastian ^a   Skordas, Spyridon ^b   Eisenbraun, Eric T ^a   Kaloyeros, Alain E ^a  

^a STATE UNIVERSITY OF NEW YORK   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FILM COMPOSITION; FLATBAND VOLTAGE; GATE DIELECTRICS; HAFNIUM OXIDE THIN FILMS;

ANNEALING; AUGER ELECTRON SPECTROSCOPY; CURRENT DENSITY; ELECTRODEPOSITION; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SUBSTRATES; THERMODYNAMIC STABILITY;

THIN FILMS;

EID: 33749614906     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2338634     Document Type: Article

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