Effect of deposition temperature on the characteristics of hafnium oxide films deposited by metalorganic chemical vapor deposition using amide precursor

Journal of Materials Research

Volumn 19, Issue 2, 2004, Pages 584-589

  Takahashi, Kenji ^a   Funakubo, Hiroshi ^a   Hino, Shiro ^a   Nakayama, Makoto ^a   Ohashi, Naoki ^b   Kiguchi, Takanori ^a   Tokumitsu, Eisuke ^a,c  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; COMPOSITION; CONCENTRATION (PROCESS); DEGRADATION; HAFNIUM COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SURFACE ROUGHNESS; THERMODYNAMIC STABILITY;

POSTDEPOSITION ANNEALING; THERMAL SUSCEPTIBILITY;

METALLIC FILMS;

EID: 1842765687     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2004.19.2.584     Document Type: Article

References (30)

1. J.H. Stathis and D.J. DiMaria, Tech. Dig. Int. Electron Device Meet. 167 (1998).
2. M. Houssa, R. Degraeve, P.W. Mertens, M.M. Heyns, J.S. Jeon, A. Halliyal, and B. Ogle, J. Appl. Phys. 86, 6462 (1999).
3. S.J. Lee, H.F. Luan, W.P. Bai, C.H. Lee, T.S. Jeon, Y. Senzaki, D. Roberts, and D.L. Kwong, Tech. Dig. Int. Electron Devices Meet. 31 (2000).
4. M. Ritala, M. Leskelä, L. Niinistö, T. Prohaska, G. Friedbacher, and M. Grasserbauer, Thin Solid Films 250, 72 (1994).
5. B-O. Cho, J. Wang, L. Sha, and J.P. Chang, Appl. Phys. Lett. 80, 1052 (2002).
6. M. Copel, M. Gribelyuk, and E. Gusev, Appl. Phys. Lett. 76, 436 (2000).
7. X. Wu, D. Landheer, G.I. Sproule, T. Quance, M.J. Graham, and G.A. Botton, J. Vac. Sci. Technol. A 20, 1141 (2002).
8. T.M. Klein, D. Niu, W.S. Epling, W. Li, D.M. Maher, C.C. Hobbs, R.I. Hegde, I.J.R. Baumvol, and G.N. Parsons, Appl. Phys. Lett. 75, 4001 (1999).
9. J. Kolodzey, E.A. Chowdhury, T.N. Adam, G. Qui, I. Rau, J.O. Olowolafe, J.S. Suehle, and Y. Chen, IEEE Trans. Electron Devices 47, 121 (1999).
10. C.T. Hsu, Y.K. Su, and M. Yokoyama, Jpn. J. Appl. Phys. 31, 2501 (1992).
11. K. Kukli, J. Aarik, A. Aidra, H. Siimon, M. Ritala, and M. Leskelä, Appl. Surf. Sci. 112, 236 (1997).
12. B.H. Lee, L. Kang, R. Neih, W. Qi, and J.C. Lee, Appl. Phys. Lett. 76, 1926 (2000).
13. B.H. Lee, L. Kang, W. Qi, R. Neih, Y. Jeon, K. Onishi, and J.C. Lee, Tech. Dig. Int. Electron Devices Meet. 133 (1999).
14. K.J. Hubbard and D.G. Schlom, J. Mater. Res. 11, 2757 (1996).
15. M. Gutowski, J.E. Jaffe, C-L. Liu, M. Stoker, R.I. Hegde, R.S. Rai, and P.J. Tobin, Appl. Phys. Lett. 80, 1897 (2002).
16. L. Kang, K. Onishi, Y. Jeon, B.H. Lee, C. Kang, W-J. Qi, R. Neih, S. Gopalan, R. Choi, and J.C. Lee, Tech. Dig. Int. Electron Devices Meet. 35 (2000).
17. R.C. Smith, T. Ma, N. Hoilien, L.Y. Tsung, M.J. Bevan, L. Colombo, J. Roberts, S.A. Campbell, and W.L. Gladfelter, Adv. Mater. Opt. Electron. 10, 105 (2000).
18. J. Aarik, A. Aidla, H. Mändar, T. Uustare, K. Kukli, and M. Schuisky, Appl. Surf. Sci. 173, 15 (2001).
19. B.H. Lee, R. Choi, L. Kang, S. Gopalan, R. Nieh, K. Onishi, Y. Jeon, W-J. Qi, C. Kang, and J.C. Lee, Tech. Dig. Int. Electron Devices Meet. 39 (2000).
20. M. Pulver and G. Wahl, Electrochem. Soc. Proc. 97-25, 960 (1997).
21. M. Balog, M. Schieber, S. Patai, and M. Michman, J. Cryst. Growth 17, 298 (1972).
22. M. Ritala, K. Kukli, A. Rahtu, P.I. Räisänen, M. Leskalä, T. Sajavaara, and J. Keinonen, Science 288, 319 (2000).
23. K-J. Choi, W-C. Shin, and S-G. Yoon, J. Mater. Res. 18, 60 (2003).
24. J. Park, B.K. Park, M. Cho, C.S. Hwang, K. Oh, and D.Y. Yang, J. Electrochem Soc. 149, G89 (2002).
25. R.G. Gordon, J. Becker, D. Hausmann, and S. Sun, Chem. Mater. 13, 2463 (2001).
26. Y. Ohshita, A. Ogura, A. Hoshino, S. Hiiro, and H. Machida, J. Cryst. Growth 233, 292 (2001).
27. J. Schaeffer, N.V. Edwards, R. Liu, D. Roan, B. Hradsky, R. Gregory, J. Kulik, E. Duda, L. Contreras, J. Christiansen, S. Zollner, P. Tobin, B-Y. Nguyen, R. Nieh, M. Ramon, R. Rao, R. Hegde, R. Rai, J. Baker, and S. Voight, J. Electrochem. Soc. 150, F67 (2003).
28. B.C. Hendrix, A.S. Borovik, C. Xu, J.F. Roeder, T.H. Baum, M.J. Bevan, M.R. Visokay, J.J. Chambers, A.L.P. Rotondaro, H. Bu, and L. Colombo, Appl. Phys. Lett. 80, 2362 (2002).
29. S.V. Elshocht, M. Caymax, S.D. Gendt, T. Conard, J. Petry, M. Claes, T. Witters, C. Zhao, B. Brijs, O. Richard, H. Bender, W. Vandervorst, R. Carter, J. Kluth, L. Date, D. Pique, and M.M. Heyns, in Novel Materials and Processes for Advanced CMOS, edited by M.I. Gardner, S. De Gendt, J-P, Maria, and S. Stemmer (Mater. Res. Soc. Symp. Proc. 745, Warrendale, PA 2003). N5.15.1.
30. S. Saito, K. Torii, M. Hiratani, and T. Onai, IEEE Electron Device Lett. 23, 348 (2002).