Atomic layer deposition of hafnium oxide thin films from tetrakis(dimethylamino)hafnium (TDMAH) and ozone

Materials Research Society Symposium - Proceedings

Volumn 765, Issue , 2003, Pages 97-102

  Liu, Xinye ^a   Ramanathan, Sasangan ^a   Seidel, Thomas E ^a  

^a AIXTRON Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; ATOMIC PHYSICS; DEPOSITION; ORGANIC COMPOUNDS; OZONE; PERMITTIVITY; SATURATION (MATERIALS COMPOSITION); SILICON WAFERS; THERMAL EFFECTS; THIN FILMS;

ATOMIC LAYER DEPOSITION; DEPOSITION RATE; HAFNIUM OXIDE; SUSCEPTOR TEMPERATURE; TETRAKISDIMETHYLAMINO HAFNIUM;

HAFNIUM COMPOUNDS;

EID: 0242661446     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-765-d3.8     Document Type: Conference Paper

References (8)

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