Electrical properties of ultrathin Al2O3 films grown by metalorganic chemical vapor deposition for advanced complementary metal-oxide semiconductor gate dielectric applications

Journal of Materials Research

Volumn 20, Issue 6, 2005, Pages 1536-1543

  Skordas, Spyridon ^a   Papadatos, Filippos ^a   Consiglio, Steven ^a   Eisenbraun, Eric T ^a   Kaloyeros, Alain E ^a   Gusev, Evgeni P ^b  

^a STATE UNIVERSITY OF NEW YORK   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ANNEALING; CMOS INTEGRATED CIRCUITS; DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PERMITTIVITY; SEMICONDUCTING SILICON COMPOUNDS; ULTRATHIN FILMS;

GATE DIELECTRICS; SILICON OXYNITRIDE;

ALUMINA;

EID: 29144527020     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.2005.0196     Document Type: Article

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