Interface and oxide traps in high-κ hafnium oxide films

Thin Solid Films

Volumn 462-463, Issue SPEC. ISS., 2004, Pages 96-100

  Wong, H ^a   Zhan, N ^b   Ng, K L ^b   Poon, M C ^b   Kok, C W ^b  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

Bonding structure; Hafnium oxide; Interface trap

Indexed keywords

BONDING STRUCTURES; HAFNIUM OXIDES; INTERFACE TRAPS; TRAP DENSITY;

CRYSTALLIZATION; DEPOSITION; GRAIN BOUNDARIES; INTERFACES (MATERIALS); MOS DEVICES; OXIDATION; POLYCRYSTALLINE MATERIALS; RAPID THERMAL ANNEALING; THIN FILMS; ULTRAHIGH VACUUM;

HAFNIUM COMPOUNDS;

EID: 4344652303     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.05.031     Document Type: Article

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