Dielectric scaling of a zero-Schottky-barrier, 5 nm gate, carbon nanotube transistor with source/drain underlaps

Journal of Applied Physics

Volumn 100, Issue 2, 2006, Pages

  Alain, Khairul ^a   Lake, Roger K ^a  

^a University of California Riverside   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC SCALING; DRAIN UNDERLAP; GATE DIELECTRIC; SUBTHRESHOLD SLOPE;

CAPACITANCE; CARBON NANOTUBES; COULOMB BLOCKADE; DIELECTRIC MATERIALS; LEAKAGE CURRENTS; SILICON COMPOUNDS; ZIRCONIUM COMPOUNDS;

MESFET DEVICES;

EID: 33746793154     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2218764     Document Type: Article

References (47)

1. J. Guo et al, Tech. Dig. - Int. Electron Devices Meet. 2, 711 (2002).
2. A. Javey, M. Shim, and H. Dai, Appl. Phys. Lett. 80, 1064 (2002).
3. J. Guo, S. Datta, and M. Lundstrom, IEEE Trans. Electron Devices 51, 172 (2004).
4. J. Guo, J. Wang, E. Polizzi, S. Datta, and M. Lundstrom, IEEE Trans. Nanotechnol. 2, 329 (2003).
5. J. Guo, M. Lundstrom, and S. Datta, Appl. Phys. Lett. 80, 3192 (2002).
6. J. Guo, S. Goasguen, M. Lundstrom, and S. Datta, Appl. Phys. Lett. 81, 1486 (2002).
7. D. V. Singh, K. A. Jenkins, J. Appenzeller, D. Neumayer, A. Grill, and H. S. P. Wong, IEEE Trans. Nanotechnol. 3, 383 (2004).
8. J. Appenzeller and D. J. Frank, Appl. Phys. Lett. 84, 1771 (2004).
9. S. Heinze, J. Tersoff, R. Mattel, V. Derycke, J. Appenzeller, and P. Avouris, Phys. Rev. Lett. 89, 106801 (2002).
10. T. Nakanishi, A. Bachtold, and C. Dekker, Phys. Rev. B 66, 073307 (2002).
11. A. Javey, J. Guo, Q. Wang, M. Lundstrom, and H. Dai, Nature (London) 424, 654 (2003).
12. A. Javey, J. Guo, M. Paulsson, Q. Wang, D. Mann, M. Lundstrom, and H. Dai, Phys. Rev. Lett. 92, 106804 (2004).
13. A. Javey, J. Guo, D. B. Farmer, Q. Wang, D. Wang, R. G. Gordon, M. Lundstrom, and H. Dai, Nano Lett. 4, 447 (2004).
14. A. Javey, J. Guo, D. B. Farmer, Q. Wang, E. Yenilmez, R. G. Gordon, M. Lundstrom, and H. Dai, Nano Lett. 4, 1319 (2004).
15. Z. Chen, J. Appenzeller, J. Knoch, Y.-M. Lin, and P. Avouris, Nano Lett. 5, 1497 (2005).
16. W. Kim, A. Javey, R. Tu, J. Cao, Q. Wang, and H. Dai, Appl. Phys. Lett. 87, 173101 (2005).
17. V. Derycke, R. Martel, J. Appenzeller, and P. Avouris, Appl. Phys. Lett. 80, 2773 (2002).
18. M. Radosavljevic, J. Appenzeller, and P. Avouris, Appl. Phys. Lett. 84, 3693 (2004).
19. A. Javey, R. Tu, D. B. Farmer, J. Guo, R. G. Gordon, and H. Dai, Nano Lett. 5, 345 (2005).
20. A. Bachtold, P. Hadley, T. Nakanishi, and C. Dekker, Science 294, 1317 (2001).
21. A. Javey, Q. Wang, A. Ural, Y. Li, and H. Dai, Nano Lett. 2, 929 (2002).
22. Y.-C. Tseng, P. Xuan, A. Javey, R. Malloy, Q. Wang, J. Bokor, and H. Dai, Nano Lett. 4, 123 (2004).
23. K. Alam and R. Lake, Appl. Phys. Lett. 87, 073104 (2005).
24. R. M. Stoltenberg and A. T. Woolley, Biomed. Microdevices 6, 105 (2004).
25. K. Keren, R. S. Berman, E. Buchstab, U. Sivan, and E. Braun, Science 302, 1380 (2003).
26. E. Braun and K. Keren, Adv. Phys. 53, 441 (2004).
27. C. Dwyer, V. Johri, M. Cheung, J. Patwardhan, A. Lebeck, and D. Sorin, Nanotechnology 15, 1240 (2004).
28. J. G. Possum, M. M. Chowdhury, V. P. Trivedi, T. J. King, Y. K. Choi, J.An, and B. Yu, Tech. Dig. - Int. Electron Devices Meet. 3, 679 (2003).
29. V. P. Trivedi, J. G. Possum, and M. M. Chowdhury, IEEE Trans. Electron Devices 52, 56 (2005).
30. F. B.Boeuf et al, Tech. Dig. - Int. Electron Devices Meet. 1, 637 (2001).
31. R. Gusmeroli, A. S. Spinellit, A. Pirovano, A. L. Lacaita, E. Baeuft, and T. Skotnickit, Tech. Dig. - Int. Electron Devices Meet. 3, 225 (2003).
32. Y.-M. Lin, J. Appenzeller, Z. Chen, Z. G. Chen, H. M. Cheng, and P. Avouris, IEEE Electron Device Lett. 26, 823 (2005).
33. International Technology Roadmap for Semiconductors, Process Integration, Devices, and Structures, 2005 ed. (http://www.itrs.net/Common/20051TRS/ PIDS2005.pdf), p. 13.
34. S. Heinze, M. Radosavljevic, J. Tersoff, and P. Avouris, Phys. Rev. B 68, 235418 (2003).
35. M. Radosavljevic, S. Heinze, J. Tersoff, and P. Avouris, Appl. Phys. Lett.83, 2435 (2003).
36. S. J. Wind, M. Radosavljevic, J. Appenzeller, and P. Avouris, J. Vac. Sci. Technol. B 21, 2856 (2003).
37. J. Appenzeller, J. Knoch, R. Martel, V. Derycke, S. Wind, and P. Avouris, Tech. Dig. - Int. Electron Devices Meet. 11, 285 (2002).
38. K. Alam and R. K. Lake, J. Appl. Phys. 98, 064307 (2005).
39. V. Eyert, J. Comput. Phys. 124, 271 (1996).
40. J. W. Mintmire, D. H. Robertson, and C. T. White, J. Phys. Chem. Solids 54, 1835 (1993).
41. K. Alam and R. Lake (unpublished).
42. P. J. Burke, Solid-State Electron. 48, 1981 (2004).
43. J. Guo, S. Hasan, A. Javey, G. Bosman, and M. Lundstrom, IEEE Trans. Nanotechnol. 4, 715 (2005).
44. S. J. Wind, J. Appenzeller, R. Martel, V. Derycke, and P. Avouris, Appl. Phys. Lett. 80, 3817 (2002).
45. S. Hasan, S. Salahuddin, M. Vaidyanathan, and M. A. Alam, IEEE Trans.Nanotechnol. 5, 14 (2006).
46. R. V. Seidel et al, Nano Lett. 5, 147 (2005).
47. B. M. Kim et al., Appl. Phys. Lett. 84, 1946 (2004).