High performance of potassium n-doped carbon nanotube field-effect transistors

Applied Physics Letters

Volumn 84, Issue 18, 2004, Pages 3693-3695

  Radosavljevic M ^a,c   Appenzeller, J ^a   Avouris, Ph ^a   Knoch, J ^b  

^a IBM RESEARCH   (United States)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

^c INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; CARBON NANOTUBE FIELD-EFFECT TRANSISTORS (CNFET); CHARGE DENSITY; SCHOTTKY BARRIERS (SB);

ANNEALING; CARBON NANOTUBES; DOPING (ADDITIVES); ELECTRIC CURRENTS; ELECTROSTATICS; ENERGY GAP; FERMI LEVEL; POTASSIUM; SCHOTTKY BARRIER DIODES; THRESHOLD VOLTAGE; VACUUM;

FIELD EFFECT TRANSISTORS;

EID: 2542439655     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1737062     Document Type: Article

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24. + ions laying on the device surface.