Frequency response of top-gated carbon nanotube field-effect transistors

IEEE Transactions on Nanotechnology

Volumn 3, Issue 3, 2004, Pages 383-387

  Singh, Dinkar V ^a   Jenkins, Keith A ^a   Appenzeller, J ^a   Neumayer, D ^a   Grill, Alfred ^a   Wong, H S Philip ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

AC measurement; Carbon nanotube (CN); High frequency

Indexed keywords

ATOMIC FORCE MICROSCOPY; BANDWIDTH; CARBON NANOTUBES; ELECTRIC CURRENTS; ELECTRON SCATTERING; FREQUENCY DOMAIN ANALYSIS; FREQUENCY RESPONSE; SCHOTTKY BARRIER DIODES; SPECTRUM ANALYZERS; TIME DOMAIN ANALYSIS;

AC MEASUREMENTS; CARBON NANOTUBE FIELD EFFECT TRANSISTORS (CNFET); CARRIER SCATTERING; HIGH FREQUENCIES;

FIELD EFFECT TRANSISTORS;

EID: 4544296982     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2004.828577     Document Type: Article

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