Drain voltage scaling in carbon nanotube transistors

Applied Physics Letters

Volumn 83, Issue 12, 2003, Pages 2435-2437

  Radosavljevic M ^a   Heinze, S ^a   Tersoff, J ^a   Avouris, Ph ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CURRENT DISTRIBUTION; GATES (TRANSISTOR); HOLE MOBILITY; SCHOTTKY BARRIER DIODES; VOLTAGE MEASUREMENT;

AMBIPOLAR DEVICES;

CARBON NANOTUBES;

EID: 0142090023     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1610791     Document Type: Article

References (14)

1. R. Martel, V. Derycke, C. Lavoie, J. Appenzeller, K. K. Chan, J. Tersoff, and Ph. Avouris, Phys. Rev. Lett. 87, 256805 (2001).
2. J. Appenzeller, J. Knoch, V. Derycke, R. Martel, S. J. Wind, and Ph. Avouris, Phys. Rev. Lett. 89, 126801 (2002).
3. S. Heinze, J. Tersoff, R. Martel, V. Derycke, J. Appenzeller, and Ph. Avouris, Phys. Rev. Lett. 89, 106801 (2002).
4. T. Nakanishi, A. Bachtold, and C. Dekker, Phys. Rev. B 66, 073307 (2002).
5. S. J. Tans, A. Verschueren, and C. Dekker, Nature (London) 393, 49 (1998); R. Martel, T. Schmidt, H. R. Shea, T. Hertel, and Ph. Avouris, Appl. Phys. Lett. 73, 2447 (1998).
6. S. J. Tans, A. Verschueren, and C. Dekker, Nature (London) 393, 49 (1998); R. Martel, T. Schmidt, H. R. Shea, T. Hertel, and Ph. Avouris, Appl. Phys. Lett. 73, 2447 (1998).
7. S. Heinze, M. Radosavljević, J. Tersoff, and Ph. Avouris, cond-mat/0302175.
8. A. Bachtold, P. Hadley, T. Nakanishi, and C. Dekker, Science 294, 1317 (2001).
9. A. Javey, H. Kim, M. Brink, Q. Wang, A. Ural, J. Quo, P. McIntyre, P. McEuen, M. Lundstrom, and H. J. Dai, Nat. Mater, 1, 241 (2002).
10. J. A. Misewich, R. Martel, Ph. Avouris, J. C. Tsang, S. Heinze, and J. Tersoff, Science 300, 783 (2003).
11. The nanotubes with mean diameter of 1.4 nm were grown by laser ablation as described in A. Thess et al., Science 273, 483 (1996). They were used without further processing and dispersed in dichloroethane by a brief exposure to ultrasound.
12. M. Furher, H. Park, and P.L. McEuen, IEEE Trans. Nanotech. 1, 78 (2002).
13. J. W. Mintmire and C. T. White, Phys. Rev. Lett. 81, 2506 (1998).
14. g) is typical for SB-field-effect transistors and in sharp contrast to conventional metal-oxide-semiconductor field-effect transistors.