Transistor structures for the study of scaling in carbon nanotubes

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 6, 2003, Pages 2856-2859

  Wind, S J ^a,b   Radosavljevic M ^a   Appenzeller, J ^a   Avouris, Ph ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b Columbia University ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; DIELECTRIC MATERIALS; ELECTRON BEAM LITHOGRAPHY; FIELD EFFECT TRANSISTORS; SILICA; THIN FILMS; TRANSCONDUCTANCE; TRANSPORT PROPERTIES;

BALLISTIC TRANSPORT; ELECTRICAL SWITCHING;

CARBON NANOTUBES;

EID: 0942289226     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1624260     Document Type: Conference Paper

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17. When the 80 nm segment is swept alone, the device fails to turn off, This is most likely due to penetration of the electric field by neighboring segments, which serve as a virtual source and drain (i.e., punchthrough). This is not surprising, considering the unfavorable ratio of gate length to gate oxide thickness (∼4:1). Data for sweeping this segment alone are therefore not shown.
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