High-performance dual-gate carbon nanotube FETs with 40-nm gate length

IEEE Electron Device Letters

Volumn 26, Issue 11, 2005, Pages 823-825

  Lin, Yu Ming ^a   Appenzeller, Joerg ^a   Chen, Zhihong ^a   Chen, Zhi Gang ^b   Cheng, Hui Ming ^b   Avouris, Phaedon ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b INSTITUTE OF METAL RESEARCH   (China)

Author keywords

Carbon nanotube (CN); Dual gate; Field effect transistor (FET); Short channel effect

Indexed keywords

CAPACITANCE; CARBON NANOTUBES; CARRIER MOBILITY; GATES (TRANSISTOR); SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; TRANSCONDUCTANCE;

CARBON NANOTUBE FIELD EFFECT TRANSISTOR (CNFET); DUAL GATE; PARASITIC CAPACITANCES; SHORT-CHANNEL EFFECTS;

FIELD EFFECT TRANSISTORS;

EID: 27744533006     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.857704     Document Type: Article

References (17)

1. P. Avouris, J. Appenzeller, R. Martel, and S. J. Wind, "Carbon nanotube electronics," Proc. IEEE, vol. 91, no. 11, pp. 1772-1784, 2003.
2. S. J. Wind, J. Appenzeller, and P. Avouris, "Lateral scaling in carbonnanotube field-effect transistors," Phys. Rev. Lett., vol. 91, p. 058 301, 2003.
3. J.-Y. Park, S. Rosenblatt, Y. Yaish, V. Sazonova, H. Ustunel, S. Brag, T. A. Arias, P. W. Brouwer, and P. L. McEuen, "Electron-phonon scattering in metallic single-walled carbon nanotubes," Nano Lett., vol. 4, pp. 517-520, 2004.
4. W. Liang, M. Bockrath, D. Bozovic, J. H. Hafner, M. Tinkham, and H. Park, "Fabry-perot inerference in a nanotube electron waveguide," Nature, vol. 411, pp. 665-669, 2001.
5. C. Liu, H.-M. Cheng, H. T. Cong., F. Li, G. Su, B. L. Zhou, and M. S. Dresselhaus, "Synthesis of macroscopically long ropes of well-aligned single-walled carbon nanotubes," Adv. Mater., vol. 12, pp. 1190-1192, 2000.
6. Z. Chen, J. Appenzeller, J. Knoch, Y.-M. Lin, and P. Avouris, "The role of metal-nanotube contact in the performance of carbon nanotube field-effect transistor," Nano Lett., vol. 5, pp. 1497-1502, 2005.
7. V. Perebeinos, J. Tersoff, and P. Avouris, "Electron-phonon interaction and transport in semiconducting carbon nanotubes," Phys. Rev. Lett., vol. 94, p. 086 802, 2005.
8. J. Knoch and J. Appenzeller, "Carbon nanotube field-effect transistors-the importance of being small," in Hardware Drivers for Ambient Intelligence. Norwell, MA: Kluwer, 2005.
9. A. Svizhenko and M. P. Anantram, "Effect of scattering and contacts on current and electrostatics in carbon nanotubes", pp. 0 503 769-0 503 769.
10. S. Rosenblatt, Y. Yaish, J. Park, J. Gore, V. Sazonova, and P. L. McEuen, "High performance electrolyte gated carbon nanotube transistors," Nano Lett., vol. 2, pp. 869-872, 2002.
11. T. Durkop, S. A. Getty, E. Cobas, and M. S. Fuhrer, "Extraordinary mobility in semiconducting carbon nanotubes," Nano Lett., vol. 4, pp. 35-39, 2004.
12. A. Javey, J. Guo, D. B. Farmer, Q. Wang, E. Yenilmez, R. G. Gordon, M. Lundstrom, and H. Dai, "Self-aligned ballistic molecular transistors and electrically parallel nanotube arrays," Nano Lett., vol. 4, pp. 1319-1322, 2004.
13. R. V. Seidel, A. P. Graham, J. Kretz, B. Rajasekharan, G. S. Duesberg, M. Liebau, E. Unger, F. Kreupl, and W. Hoenlein, "Sub-20 nm short channel carbon nanotube transistors," Nano Lett., vol. 5, pp. 147-150, 2005.
14. Y.-M. Lin, J. Appenzeller, and P. Avouris, "Novel structures enabling bulk switching in carbon nanotube FETs," in Proc. IEEE 62th Device Research Conf., 2004, p. 133.
15. A. Javey, J. Guo, D. B. Farmer, Q. Wang, D. Wang, R. G. Gordon, M. Lundstrom, and H. Dai, "Carbon nanotube field-effect transistor with integrated ohmic contacts and high-κ gate dielectrics," Nano Lett., vol. 4, pp. 447-450, 2004.
16. Y.-M. Lin, J. Appenzeller, J. Knoch, and P. Avouris, "High-performance carbon nanotube field-effect transistor with tunable polarities," IEEE Trans. Nanotechnol., vol. 4, no. 5, pp. 481-489, May 2005.
17. J. Chen, C. Klinke, A. Afzali-Ardakani, and P. Avouris, "Charge-transfer doped and self-aligned carbon nanotube transistors," Appl. Phys. Lett., vol. 86, p. 123 108, 2005.