Short-channel like effects in Schottky barrier carbon nanotube field-effect transistors

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2002, Pages 285-288

  Appenzeller, J ^a   Knoch, J ^b   Martel, R ^a   Derycke, V ^a   Wind, S ^a   Avouris, Ph ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBES; ELECTROSTATICS; FABRICATION; LASER ABLATION; SCHOTTKY BARRIER DIODES; SILICA; SUBSTRATES;

SINGLE WALL CARBON NANOTUBES (SWNT);

FIELD EFFECT TRANSISTORS;

EID: 0036932009     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)

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