Metal-insulator-semiconductor electrostatics of carbon nanotubes

Applied Physics Letters

Volumn 81, Issue 8, 2002, Pages 1486-1488

  Guo, Jing ^a   Goasguen, Sebastien ^a   Lundstrom, Mark ^a   Datta, Supriyo ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

C-V CURVE; C-V MEASUREMENT; CARBON NANOTUBE FIELD-EFFECT TRANSISTORS; DENSITY-OF-STATES; ELECTROSTATIC CALCULATIONS; METAL INSULATOR SEMICONDUCTOR CAPACITORS; METAL-INSULATOR-SEMICONDUCTORS; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; ON-CURRENTS; PACKED ARRAYS;

CAPACITORS; CARBON; ELECTRONIC STRUCTURE; ELECTROSTATICS; FIELD EFFECT TRANSISTORS; METAL INSULATOR BOUNDARIES; MIS DEVICES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR INSULATOR BOUNDARIES; VANADIUM;

CARBON NANOTUBES;

EID: 79956043573     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1502188     Document Type: Article

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