High-performance carbon nanotube transistors on SrTiO 3/Si substrates

Applied Physics Letters

Volumn 84, Issue 11, 2004, Pages 1946-1948

  Kim, B M ^a,d   Brintlinger, T ^a   Cobas, E ^a   Fuhrer, M S ^a   Zheng, Haimei ^b   Yu, Z ^c   Droopad, R ^c   Ramdani, J ^c   Eisenbeiser, K ^c  

^a Bldg 142   (United States)

^b UNIVERSITY OF MARYLAND   (United States)

^c MOTOROLA INC   (United States)

^d UNIVERSITY OF PENNSYLVANIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBE TRANSISTORS; GATE ELECTRODES;

ATOMIC FORCE MICROSCOPY; CAPACITANCE; CHEMICAL VAPOR DEPOSITION; ELECTRIC FIELD EFFECTS; ELECTROCHEMICAL ELECTRODES; ELECTROLYSIS; EVAPORATION; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); GROWTH (MATERIALS); SCANNING TUNNELING MICROSCOPY; SYNTHESIS (CHEMICAL); TRANSCONDUCTANCE;

CARBON NANOTUBES;

EID: 1842788527     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1682691     Document Type: Article

References (22)

1. S. J. Tans, R. M. Verschueren, and C. Dekker, Nature (London) 393, 49 (1998); R. Martel, T. Schmidt, H. R. Shea, T. Hertel, and Ph. Avouris, Appl. Phys. Lett. 73, 2447 (1998).
2. S. J. Tans, R. M. Verschueren, and C. Dekker, Nature (London) 393, 49 (1998); R. Martel, T. Schmidt, H. R. Shea, T. Hertel, and Ph. Avouris, Appl. Phys. Lett. 73, 2447 (1998).
3. A. Bachtold, P. Hadley, T. Nakanishi, and C. Dekker, Science 294, 1317 (2001).
4. J. Appenzeller, J. Knoch, V. Derycke, R. Martel, S. Wind, and Ph. Avouris, Phys. Rev. Lett. 89, 126801 (2002).
5. A. Javey, H. Kim, M. Brink, Q. Wang, A. Ural, J. Guo, P. McIntyre, P. L. McEuen, M. Lundstrom, and H. J. Dai, Nat. Mater. 1, 241 (2002).
6. S. Rosenblatt, Y. Yaish, J. Park, J. Gore, V. Sazonova, and P. L. McEuen, Nano Lett. 2, 869 (2002).
7. A. Javey, J. Guo, Q. Wang, M. Lundstrom, and H. J. Dai, Nature (London) 424, 654 (2003).
8. Y. Yaish, J.-Y. Park, S. Rosenblatt, V. Sazonova, M. Brink, and P. L. McEuen, Phys. Rev. Lett. 92, 046401 (2004).
9. S. J. Wind, J. Appenzeller, R. Martel, V. Derycke, and Ph. Avouris, Appl. Phys. Lett. 80, 3817 (2002).
10. K. Eisenbeiser, J. M. Finder, Z. Yu, J. Ramdani, J. A. Curless, J. A. Hallmark, R. Droopad, W. J. Ooms, L. Salem, S. Bradshaw, and C. D. Overgaard, Appl. Phys. Lett. 76, 1324 (2000).
11. Z. Yu, R. Droopad, J. Ramdani, J. A. Curless, C. D. Overgaard, J. M. Finder, K. W. Eisenbeiser, J. Wang, J. A. Hallmark, and W. J. Ooms, Mater. Res. Soc. Symp. Proc. 567, 427 (1999).
12. J. Kong, H. T. Soh, A. M. Cassell, C. F. Quate, and H. J. Dai, Nature (London) 395, 878 (1998).
13. G. Y. Yang, J. M. Finder, J. Wang, Z. L. Wang, Z. Yu, J. Ramdani, R. Droopad, K. W. Eisenbeiser, and R. Ramesh, J. Mater. Res. 17, 204 (2002).
14. J. Kong, A. M. Cassell, and H. J. Dai, Chem. Phys. Lett. 292, 567 (1998).
15. As noted elsewhere [R. Martel, H. P. Wong, K. Chan, and Ph. Avouris, Tech. Dig. - Int. Electron Devices Meet. 2001, 159; J. Guo, S. Goasguen, M. Lundstrom, and S. Datta, Appl. Phys. Lett. 81, 1486 (2002)], the proper width to use for the normalization depends on geometry and is typically width rather than d, to account for the increased capacitance of the cylindrical nanotube to the gate electrode; for the purposes of comparison to other nanotube devices, we will simply use d.
16. As noted elsewhere [R. Martel, H. P. Wong, K. Chan, and Ph. Avouris, Tech. Dig. - Int. Electron Devices Meet. 2001, 159; J. Guo, S. Goasguen, M. Lundstrom, and S. Datta, Appl. Phys. Lett. 81, 1486 (2002)], the proper width to use for the normalization depends on geometry and is typically width rather than d, to account for the increased capacitance of the cylindrical nanotube to the gate electrode; for the purposes of comparison to other nanotube devices, we will simply used.
17. S. Heinze, J. Tersoff, R. Martel, V. Derycke, J. Appenzeller, and P. Avouris, Phys. Rev. Lett. 89, 106801 (2002).
18. S. Heinze, M. Radosavljevic, J. Tersoff, and Ph. Avouris, Phys. Rev. B 68, 235418 (2003).
19. In Ref. 16 the effect of a high-κ/low-κ interface at the position of the nanotube was found to decrease the effective gate voltage by at most a factor of ∼2.
20. g in the diffusive FET model.
21. J. Guo, S. Datta, and M. Lundstrom, IEEE Trans. Electron Devices 51, 172 (2004).
22. F. Leonard and J. Tersoff, Appl. Phys. Lett. 81, 4835 (2002).