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As noted elsewhere [R. Martel, H. P. Wong, K. Chan, and Ph. Avouris, Tech. Dig. - Int. Electron Devices Meet. 2001, 159; J. Guo, S. Goasguen, M. Lundstrom, and S. Datta, Appl. Phys. Lett. 81, 1486 (2002)], the proper width to use for the normalization depends on geometry and is typically width rather than d, to account for the increased capacitance of the cylindrical nanotube to the gate electrode; for the purposes of comparison to other nanotube devices, we will simply use d.
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As noted elsewhere [R. Martel, H. P. Wong, K. Chan, and Ph. Avouris, Tech. Dig. - Int. Electron Devices Meet. 2001, 159; J. Guo, S. Goasguen, M. Lundstrom, and S. Datta, Appl. Phys. Lett. 81, 1486 (2002)], the proper width to use for the normalization depends on geometry and is typically width rather than d, to account for the increased capacitance of the cylindrical nanotube to the gate electrode; for the purposes of comparison to other nanotube devices, we will simply used.
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1842727532
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note
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In Ref. 16 the effect of a high-κ/low-κ interface at the position of the nanotube was found to decrease the effective gate voltage by at most a factor of ∼2.
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20
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1842626753
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note
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g in the diffusive FET model.
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