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Volumn 84, Issue 11, 2004, Pages 1946-1948

High-performance carbon nanotube transistors on SrTiO 3/Si substrates

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBE TRANSISTORS; GATE ELECTRODES;

EID: 1842788527     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1682691     Document Type: Article
Times cited : (67)

References (22)
  • 1
    • 0032492884 scopus 로고    scopus 로고
    • S. J. Tans, R. M. Verschueren, and C. Dekker, Nature (London) 393, 49 (1998); R. Martel, T. Schmidt, H. R. Shea, T. Hertel, and Ph. Avouris, Appl. Phys. Lett. 73, 2447 (1998).
    • (1998) Nature (London) , vol.393 , pp. 49
    • Tans, S.J.1    Verschueren, R.M.2    Dekker, C.3
  • 15
    • 0035718181 scopus 로고    scopus 로고
    • As noted elsewhere [R. Martel, H. P. Wong, K. Chan, and Ph. Avouris, Tech. Dig. - Int. Electron Devices Meet. 2001, 159; J. Guo, S. Goasguen, M. Lundstrom, and S. Datta, Appl. Phys. Lett. 81, 1486 (2002)], the proper width to use for the normalization depends on geometry and is typically width rather than d, to account for the increased capacitance of the cylindrical nanotube to the gate electrode; for the purposes of comparison to other nanotube devices, we will simply use d.
    • (2001) Tech. Dig. - Int. Electron Devices Meet. , pp. 159
    • Martel, R.1    Wong, H.P.2    Chan, K.3    Avouris, Ph.4
  • 16
    • 79956043573 scopus 로고    scopus 로고
    • As noted elsewhere [R. Martel, H. P. Wong, K. Chan, and Ph. Avouris, Tech. Dig. - Int. Electron Devices Meet. 2001, 159; J. Guo, S. Goasguen, M. Lundstrom, and S. Datta, Appl. Phys. Lett. 81, 1486 (2002)], the proper width to use for the normalization depends on geometry and is typically width rather than d, to account for the increased capacitance of the cylindrical nanotube to the gate electrode; for the purposes of comparison to other nanotube devices, we will simply used.
    • (2002) Appl. Phys. Lett. , vol.81 , pp. 1486
    • Guo, J.1    Goasguen, S.2    Lundstrom, M.3    Datta, S.4
  • 19
    • 1842727532 scopus 로고    scopus 로고
    • note
    • In Ref. 16 the effect of a high-κ/low-κ interface at the position of the nanotube was found to decrease the effective gate voltage by at most a factor of ∼2.
  • 20
    • 1842626753 scopus 로고    scopus 로고
    • note
    • g in the diffusive FET model.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.