High performance n-type carbon nanotube field-effect transistors with chemically doped contacts

Nano Letters

Volumn 5, Issue 2, 2005, Pages 345-348

  Javey, Ali ^a   Tu, Ryan ^a   Farmer, Damon B ^b   Guo, Jing ^c   Gordon, Roy G ^b   Dai, Hongjie ^a  

^a STANFORD UNIVERSITY   (United States)

^b HARVARD UNIVERSITY   (United States)

^c J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION (ALD); CHEMICAL DOPING; ELECTRON TRANSMISSION; SINGLE-WALLED CARBON NANOTUBES (SWNT);

CHEMICAL BONDS; DIELECTRIC MATERIALS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; FIELD EFFECT TRANSISTORS; POTASSIUM; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR MATERIALS;

CARBON NANOTUBES;

CARBON NANOTUBE; POTASSIUM;

ARTICLE; CHEMISTRY; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; ELECTRODE; EQUIPMENT; EQUIPMENT DESIGN; EVALUATION; INSTRUMENTATION; METHODOLOGY; NANOTECHNOLOGY; SEMICONDUCTOR; ULTRASTRUCTURE;

CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; ELECTRODES; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; NANOTECHNOLOGY; NANOTUBES, CARBON; POTASSIUM; TRANSISTORS;

EID: 14744272771     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl047931j     Document Type: Review

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